Semiconductor device

ABSTRACT

A non-insulated DC-DC converter a power MOS·FRT for a highside switch and a power MOS·FET for a lowside switch. In the non-insulated DC-DC converter, the power MOS·FET for the highside switch and the power MOS·FET for the lowside switch, driver circuits that control operations of these elements, respectively, and a Schottky barrier diode connected in parallel with the power MOS·FET for the lowside switch are respectively formed in four different semiconductor chips. These four semiconductor chips are housed in one package. The semiconductor chips are mounted over the same die pad. The semiconductor chips are disposed so as to approach each other.

CROSS-REFERENCE TO RELATED APPLICATION

The present application claims priority from Japanese patent applicationNo. 2004-123153, filed on Apr. 19, 2004, the content of which is herebyincorporated by reference into this application.

BACKGROUND OF THE INVENTION

The present invention relates in general to a semiconductor device, and,more particularly, to a technique that is effective when applied to asemiconductor device having a power supply circuit.

A DC-DC converter, which is widely used as one example of a power supplycircuit, has a configuration wherein a power MOS·FET (Metal OxideSemiconductor Field Effect Transistor) for a highside switch and a powerMOS·FET for a lowside switch are connected in series. The power MOS·FETfor the highside switch has a switch function for control of the DC-DCconverter. The power MOS·FET for the lowside switch has a switchfunction for synchronization and rectification. The conversion of apower supply voltage is performed by alternately turning these two powerMOS·FETs on/off while being synchronized with each other.

Meanwhile, there is a known DC-DC converter in which a Schottky barrierdiode is electrically connected to its output in parallel with the powerMOS·FET for the lowside switch. That is, the Schottky barrier diode,which has a lower forward voltage VF than a parasitic (body) diode ofthe power MOS·FET for the lowside switch, is connected in parallel withthe power MOS·FET for the lowside switch. A current that flows duringthe dead time (corresponding to a period in which both power MOS·FETsfor highside and lowside switches are turned off) of the DC-DC converteris commutated to the Schottky barrier diode, to thereby reduce the diodeconduction loss, as well as a diode recovery loss due to a reverserecovery time (trr) being made fast, whereby a loss produced during thedead time of the DC-DC converter is reduced, thereby to improve itsvoltage conversion efficiency. In a DC-DC converter considered by thepresent inventors, the power MOS·FET for the highside switch, the powerMOS·FET for the lowside switch, a control IC (Integrated circuit) forcontrolling the operations of those power MOS·FETs, and the Schottkybarrier diode are respectively formed in discrete semiconductor chips,and the respective semiconductor chips are encapsulated in separatepackages.

An example of such a DC-DC converter has been described in, for example,Japanese Unexamined Patent Publication No. 2002-217416, which disclosesa technique for forming a highside switch by use of a horizontal powerMOS·FET and forming a lowside switch by use of a vertical power MOS FET.

A technique, using resistors and capacitors, for reducing noise thatpresents a problem for a DC-DC converter in which a control circuit,driver circuits and power MOS·FETs are brought into one chip, has beendisclosed in, for example, Japanese Unexamined Patent Publication No.2001-25239.

SUMMARY OF THE INVENTION

Meanwhile, the present inventors have found that a DC-DC converterhaving a construction as described above, in which the power MOS·FET forthe highside switch, the power MOS·FET for the lowside switch, thecontrol IC and the Schottky barrier diode are respectively formed indiscrete semiconductor chips and the respective semiconductor chips arerespectively encapsulated in separate packages, has the followingproblems.

That is, with a construction in which several packages are provided,problems result in that the commutation of a load current to theSchottky barrier diode during the dead time is impaired by theinductances of a wiring for electrically connecting the cathode of theSchottky barrier diode and the output of the DC-DC converter and awiring for electrically connecting the anode of the Schottky barrierdiode and a ground wiring, so that despite the use of a Schottky barrierdiode having a lower forward voltage than that of the parasitic diode, asufficient effect cannot be obtained in terms of a reduction in diodeconduction loss and a reduction in diode recovery loss due to thereverse recovery time being made fast.

A problem arises in that, when the load current that flows through theSchottky barrier diode during the dead time becomes small due to thewiring inductances and the load current flows even into the body diodeof the power MOS·FET for the lowside switch, the potential on the outputside of the DC-DC converter is reduced to a negative potential by theforward voltage of the body diode, and the output of the control ICelectrically connected to the power MOS·FET is also brought to anegative potential, so that a parasitic npn bipolar transistor is turnedon within the control IC, to thereby increase the current consumption ofthe control IC. Further, a problem arises in that a malfunction occursin that, when its increased state proceeds and a potential between thesource electrode (BOOT) side of a p channel MOS·FET of a CMOS(Complementary MOS) inverter of the control IC and the output of theDC-DC converter becomes lower than a prescribed potential value, aprotection circuit function of the DC-DC converter works automaticallyto stop the operation of the power MOS·FET for the highside switch. Inaddition to the above, a problem also arises in that, when a pluralityof DC-DC converters are electrically connected to a load circuit like aCPU or the like to construct an overall system, including a plurality ofDC-DC converters, miniaturization of the overall system is impaired whenSchottky barrier diodes are connected to the individual DC-DC convertersin separate packages.

An object of the present invention is to provide a technique that iscapable of enhancing the power supply conversion efficiency of asemiconductor device.

The above and other objects and novel features of the present inventionwill become apparent from the following descriptions in the presentspecification and the accompanying drawings.

A summary of representative aspects of the invention disclosed in thepresent application will be explained in as follows:

The present invention provides a semiconductor device comprising a firstpower supply terminal for supply of a first potential, at least onesecond power supply terminal for supply of a second potential that islower than the first potential, first and second field effecttransistors that are series-connected between the first and second powersupply terminals, a control circuit which is electrically connected toinputs of the first and second field effect transistors and whichcontrol operations of the first and second field effect transistors, andan output wiring section connected to a wiring that connects the firstand second field effect transistors, wherein a Schottky barrier diodeconnected in parallel with the second field effect transistor isprovided between the output wiring section and the second power supplyterminal, wherein the first field effect transistor, the second fieldeffect transistor, the control circuit and the Schottky barrier diodeare respectively formed in discrete semiconductor chips, and wherein theseparate semiconductor chips are encapsulated in one sealing body.

Advantageous effects obtained by the present invention as disclosed inthe present application will be explained in brief as follows:

The first field effect transistor, the second field effect transistor,the control circuit and the Schottky barrier diode are respectivelyformed in discrete semiconductor chips, and the discrete semiconductorchips are encapsulated in one sealing body. Consequently, a wiringsection that electrically connects the anode of the Schottky barrierdiode and the output wiring section, and a wiring section thatelectrically connects the cathode of the Schottky barrier diode and thesecond power supply terminal can be shortened in length. Further, theinductances of the wiring sections can be reduced. It is thereforepossible to reduce the diode conduction loss and the diode recovery lossduring a dead time and enhance the voltage conversion efficiency of asemiconductor device.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a circuit diagram showing one example of a semiconductordevice according to a first embodiment of the present invention;

FIG. 2 is a circuit diagram illustrating one example of a controlcircuit of the semiconductor device shown in FIG. 1;

FIG. 3 is a timing chart showing one example of the operation of thesemiconductor device shown in FIG. 1;

FIG. 4 is a schematic diagram showing one example of the packaging usedfor a semiconductor device considered by the present inventors;

FIG. 5 is a schematic diagram of a circuit of the semiconductor device;

FIG. 6 is a diagram showing a parasitic operation of a semiconductorchip formed with a control chip;

FIG. 7 is an equivalent circuit diagram showing parasitic inductancecomponents on the semiconductor device shown in FIG. 4;

FIG. 8 is a schematic diagram showing a circuit operation of thesemiconductor device;

FIG. 9 is a diagram showing a device section at the circuit operation ofFIG. 8;

FIG. 10 is a schematic diagram showing an a configuration example of thesemiconductor device according to the first embodiment of the presentinvention;

FIG. 11 is an overall plan view showing a main surface side of thesemiconductor device shown in FIG. 10;

FIG. 12 is a side view showing the semiconductor device shown in FIG.11;

FIG. 13 is an overall plan view illustrating a back surface side of thesemiconductor device shown in FIG. 11;

FIG. 14 is a perspective view showing an outward appearance of thesemiconductor device shown in FIG. 11;

FIG. 15 is an overall plan view showing a main surface side of a packageas seen through the inside of the package of the semiconductor deviceshown in FIG. 11;

FIG. 16 is a cross-sectional view taken along line Y1-Y1 of FIG. 15;

FIG. 17 is a cross-sectional view taken along line X1-X1 of FIG. 15;

FIG. 18 is an overall plan view showing a main surface side of a firstsemiconductor chip that constitutes the semiconductor device shown inFIG. 11;

FIG. 19 is a cross-sectional view taken along line X2-X2 of FIG. 18;

FIG. 20 is a fragmentary cross-sectional view showing the firstsemiconductor chip shown in FIG. 18;

FIG. 21 is a cross-sectional view taken along line Y2-Y2 of FIG. 18;

FIG. 22 is a fragmentary cross-sectional view illustrating a thirdsemiconductor chip that constitutes the semiconductor device shown inFIG. 11;

FIG. 23 is a fragmentary cross-sectional view depicting a fourthsemiconductor chip that constitutes the semiconductor device shown inFIG. 11;

FIG. 24 is a plan view showing one example of the packaging of thesemiconductor device shown in FIG. 11;

FIG. 25 is a side view illustrating the semiconductor device shown inFIG. 24;

FIG. 26 is a circuit diagram showing one example of a circuit systemconfiguration including the semiconductor device shown in FIG. 11;

FIG. 27 is a flow diagram depicting an assembly process of thesemiconductor device shown in FIG. 11;

FIG. 28 is a fragmentary plan view showing one example illustrative of amain surface side of each unit area of a lead frame employed in theassembly process of the semiconductor device shown in FIG. 11;

FIG. 29 is a plan view illustrating a back surface side of each unitarea of the lead frame shown in FIG. 28;

FIG. 30 is a plan view showing each unit area of the lead frame employedin the assembly process of the semiconductor device shown in FIG. 11;

FIG. 31 is a plan view depicting an example of a semiconductor deviceaccording to a second embodiment of the present invention;

FIG. 32 is a plan view showing an example, exclusive of metal wiringboards, of the semiconductor device shown in FIG. 31;

FIG. 33 is a cross-sectional view taken along line Y3-Y3 of FIG. 31;

FIG. 34 is a cross-sectional view taken along line X3-X3 of FIG. 31;

FIG. 35 is a plan view showing a top surface of a semiconductor deviceaccording to a third embodiment of the present invention;

FIG. 36 is a cross-sectional view taken along line Y4-Y4 of FIG. 35;

FIG. 37 is a cross-sectional view taken along line X4-X4 of FIG. 35;

FIG. 38 is a cross-sectional view showing a semiconductor deviceaccording to a fourth embodiment of the present invention;

FIG. 39 is a cross-sectional view showing a semiconductor deviceillustrative of a modification of FIG. 38;

FIG. 40 is a plan view illustrating an example of a semiconductor deviceaccording to a fifth embodiment of the present invention;

FIG. 41 is a cross-sectional view taken along line X5-X5 of FIG. 40;

FIG. 42 is a plan view showing an example of a semiconductor deviceaccording to a sixth embodiment of the present invention;

FIG. 43 is a plan view illustrating an example of the semiconductordevice, exclusive of a metal wiring board and bonding wires shown inFIG. 42;

FIG. 44 is a cross-sectional view taken along line Y6-Y6 of FIG. 42;

FIG. 45 is a cross-sectional view taken along line X6-X6 of FIG. 42;

FIG. 46 is a schematic diagram showing an example of a semiconductordevice according to a seventh embodiment of the present invention;

FIG. 47 is a diagram illustrating an operating state of a parasiticdevice of a third semiconductor chip in the configuration of thesemiconductor device shown in FIG. 46;

FIG. 48 is a diagram illustrating an operating state of the parasiticdevice of the third semiconductor chip in the configuration of thesemiconductor device shown in FIG. 46;

FIG. 49 is a plan view showing an example of the semiconductor deviceaccording to the seventh embodiment of the present invention;

FIG. 50 is a cross-sectional view taken along line Y7-Y7 of FIG. 49;

FIG. 51 is a plan view showing an example of a semiconductor deviceaccording to an eighth embodiment of the present invention;

FIG. 52 is a cross-sectional view taken along line Y8-Y8 of FIG. 51;

FIG. 53 is a plan view showing an example of a semiconductor deviceaccording to a ninth embodiment of the present invention; and

FIG. 54 is a cross-sectional view taken along line Y9-Y9 of FIG. 53.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Whenever circumstances require it for convenience, the subject matter ofthe present invention will be described as being divided into aplurality of sections or embodiments. However, unless otherwisespecified in particular, they are not irrelevant to one another. One hasto do with modifications, details and supplementary explanations of someor all of the others.

When reference is made to a number of elements or the like (includingthe number of pieces, numerical values, quantity, range, etc.) in thefollowing description of the embodiments, the number is not limited to aspecific number and may be greater than or less than or equal to thespecific number, unless otherwise specified in particular and definitelylimited to the specific number in principle. It is also needless to saythat components (including element or factor steps, etc.) employed inthe following embodiments are not always essential, unless otherwisespecified in particular and considered to be definitely essential inprinciple. Similarly, when reference is made to shapes, positionalrelations and the like of the components or the like in the followingdescription of the embodiments, they will include ones substantiallyanalogous or similar to their shapes or the like, unless otherwisespecified in particular and considered not to be definitely so inprinciple. This similarly applies even to the above-described numericalvalues and ranges. Those elements each having the same function in allof the drawings are respectively given the same reference numerals, anda repetitive description thereof will therefore be omitted. In theembodiments, a MOS·FET (Metal Oxide Semiconductor Field EffectTransistor) shown with a field effect transistor, as typical, isabbreviated as “MOS”, a p channel type MIS·FRT is abbreviated as “pMIS”and an n channel type MIS·FET is abbreviated as “nMIS”. The embodimentsof the present invention will hereinafter be described in detail on thebasis of the drawings.

First Preferred Embodiment

A semiconductor device according to a first embodiment of the presentinvention operates as a non-insulated DC-DC converter of the type usedin a power supply circuit of an electronic apparatus like, for example,a desk top personal computer, a notebook-size personal computer, aserver or a game machine or the like. FIG. 1 shows one example of acircuit diagram of the non-insulated DC-DC converter 1. Thenon-insulated DC-DC converter 1 includes a control circuit 2, drivercircuits (first and second control circuits) 3 a and 3 b, power MOSs(first and second field effect transistors) Q1 and Q2, a Schottkybarrier diode (first diode) D1, a coil L1 and a capacitor C1, etc.

The control circuit 2 is a circuit which supplies a signal forcontrolling the voltage switch-on widths (on time) of the power MOSs Q1and Q2. The control circuit 2 is packaged aside from the power MOSs Q1and Q2. The output (corresponding to a terminal for the control signal)of the control circuit 2 is electrically connected to correspondinginputs of the driver circuits 3 a and 3 b. The outputs of the drivercircuits 3 a and 3 b are electrically connected to corresponding gatesof the power MOSs Q1 and Q2. The driver circuits 3 a and 3 b consist ofcircuits which respectively control the potentials applied to the gatesof the power MOSs Q1 and Q2 in accordance with the control signalsupplied from the control circuit 2 to thereby control the operations ofthe power MOSs Q1 and Q2. The driver circuits 3 a and 3 b arerespectively formed of a CMOS inverter circuit, for example. One exampleof a circuit diagram of the driver circuit 3 a is shown in FIG. 2. Thedriver circuit 3 a has a circuit configuration wherein a p channel powerMOS Q3 and an n channel power MOS Q4 are complementary-connected inseries. The driver circuit 3 a is controlled based on a control inputsignal IN1, and it controls the level of an output signal OUT1 throughthe power MOS Q1. Incidentally, symbol G indicates a gate, symbol Dindicates a drain and symbol S indicates a source. Since the drivercircuit 3 b is substantially identical in operation to the drivercircuit 3 a, its description is omitted.

The power MOSs Q1 and Q2 shown in FIG. 1 are series-connected between aterminal (first power supply terminal) ET1 for the supply of an inputpower supply potential (first power supply potential) Vin and a terminal(second power supply terminal) for the supply of a reference potential(second power supply potential) GND. That is, the power MOS Q1 isprovided in such a manner that its source-drain path is connected inseries between the terminal ET1 and an output node (output terminal) N1.The power MOS Q2 is provided in such a manner that its source-drain pathis connected in series between the output node N1 and the terminal forthe supply of the ground potential GND. The input power supply potentialVin ranges from about 5 to 12V, for example. The reference potentialGND, for example, is a power supply potential lower than the input powersupply potential, e.g., 0 (zero)V corresponding to ground potential. Theoperating frequency (corresponding to a cycle or period in which each ofthe power MOSs Q1 and Q2 is turned on and off) of the non-insulatedDC-DC converter 1 is about 1 MHz, for example.

The power MOS Q1 is a power transistor for a highside switch (highpotential side: first operating voltage), and it has a switch functionfor storing energy into the coil L1 that supplies power to the output(the input of a load circuit 4) of the non-insulated DC-DC converter 1.The power MOS Q1 is formed of a vertical field effect transistor whosechannel is formed in the direction of thickness of a semiconductor chip.According to the discussions of the present inventors, switching losses(turn-on loss and turn-off loss) greatly appear in sight in the powerMOS Q1 due to each parasitic capacitance added to the power MOS Q1 asthe operating frequency of the non-insulated DC-DC converter 1 becomeshigher. It is thus desirable to normally employ a horizontal fieldeffect transistor, whose channel is formed along a main surface (surfaceintersecting the thickness direction of the semiconductor chip) of thesemiconductor chip, as the field effect transistor for the highsideswitch in consideration of the switching losses. This is because, sincea horizontal field effect transistor is smaller than a vertical fieldeffect transistor in terms of the area in which a gate electrode and adrain region overlap each other, the parasitic capacitance (gateparasitic capacitance) added between the gate and drain can be reduced.However, when an attempt is made to obtain a resistance (on resistance)formed at the operation of the horizontal field effect transistor atapproximately the same value as the vertical field effect transistor,the cell area of the horizontal field effect transistor must beincreased to be greater than or equal to about 2.5 times the cell areaof the vertical field effect transistor. Therefore, it brings about adisadvantage in achieving a device size reduction. On the other hand,the channel width per unit area can be increased in the vertical fieldeffect transistor, as compared with the horizontal field effecttransistor, and its on resistance can be reduced. That is, the formationof the power MOS Q1 by the vertical field effect transistor makes itpossible to realize a device size reduction and bring the packaging to asmaller size.

On the other hand, the power MOS Q2 is a power transistor for a lowsideswitch (low potential side: second operating voltage). Further, thepower MOS Q2 is a rectifying transistor of the non-insulated DC-DCconverter 1, and it has the function of performing rectification in syncwith a frequency sent from the control circuit 2 with its resistancebeing held low. The power MOS Q2 is formed of a vertical power MOS whosechannel is formed along the direction of thickness of the semiconductorchip in a manner similar to the power MOS Q1. This results from thefollowing reasons, for example. FIG. 3 shows one example of a timingchart of the non-insulated DC-DC converter 1. Ton indicates the pulsewidth at the turning on of the power MOS Q1 for the highside switch, andT indicates the pulse cycle. As shown in FIG. 3, the power MOS Q2 forthe lowside switch is longer than the power MOS Q1 for the highsideswitch in its on time (the time during which the voltage is beingapplied). Therefore, since a loss caused by the on resistance of thepower MOS Q2, rather than the switching losses, greatly appear in sightin the power MOS Q2, it is advantageous to employ a vertical fieldeffect transistor whose channel width per unit area can be increased, ascompared with the horizontal field effect transistor. That is, since theon resistance can be reduced by forming the power MOS Q2 for the lowsideswitch using a vertical field effect transistor, the voltage conversionefficiency can be enhanced even though the current that flows throughthe non-insulated DC-DC converter 1 increases.

The output node N1 for supplying an output power supply potential to theoutside is provided between wirings for connecting the source of thepower MOS Q1 of the non-insulated DC-DC converter 1 shown in FIG. 1 andthe drain of the power MOS Q2 thereof. The output node N1 iselectrically connected to the coil L1 through an output wiring, and itis electrically connected to the load circuit 4 through an outputwiring. The Schottky barrier diode D1, which has a lower forward voltageVf than a parasitic diode Dp of the power MOS Q2, is electricallyconnected between the output wiring for connecting the output node N1and the coil L1 and the terminal for the supply is of the referencepotential GND so as to be parallel with the power MOS Q2. The anode ofthe Schottky barrier diode D1 is electrically connected to the terminalfor the supply of the reference potential GND, whereas the cathodethereof is electrically connected to the output wiring for connectingthe coil L1 and the output node N1. Connecting the Schottky barrierdiode D1 in this way makes it possible to reduce the voltage drop at thedead time when the power MOS Q2 is turned off and to reduce a conductionloss in its diode. The diode recovery loss can be reduced by making areverse recovery time (trr) fast.

The capacitor C1 is electrically connected between the output wiring forconnecting the coil L1 and the load circuit 4 and the terminal for thesupply of the reference potential GND. As the load circuit 4, a CPU(Central Processing Unit) or DSP (Digital Signal Processor) or the likeof the electronic apparatus can be illustrated by way of example.Terminals ET2 and ET3 shown in FIG. 1 are terminals for supplying powersupply voltages to the drivers 3 a and 3 b, respectively.

In such a circuit, the conversion of the power supply voltage isperformed by alternately turning the power MOSs Q1 and Q2 on/off whilebeing synchronized with each other. That is, when the power MOS Q1 forthe highside switch is on, a current (first current) 11 flows from theterminal ET1, which is electrically connected to the drain of the powerMOS Q1, to the output node N1 via the power MOS Q1. When the power MOSQ1 for the highside switch is off, a current 12 flows due to a backelectromotive voltage of the coil L1. Turning on the power MOS Q2 forthe lowside switch, when the current 12 is flowing, enables a reductionin the voltage drop. The current 11 is a large current of about 20A, forexample.

One example of the packaging configuration of a non-insulated DC-DCconverter discussed by the present inventors is shown in FIG. 4. In thenon-insulated DC-DC converter 50A, a power MOS Q1 for a highside switch,a power MOS Q2 for a lowside switch, driver circuits 3 a and 3 b and aSchottky barrier diode D1 are respectively formed in discrete orseparate semiconductor chips 5 a through 5 d, and they are respectivelyencapsulated in separate packages 6 a through 6 d. Then, the respectivepackages 6 a through 6 d are electrically connected to one anotherthrough wirings of a wiring board over which the packages 6 a through 6d are mounted. However, it has been found by the present inventors thatthe following problems arise in such a package configuration.

The first problem is that, since the Schottky diode D1 is provided inthe discrete package, the path of the wiring for electrically connectingthe cathode of the Schottky barrier diode D1 and the output wiring ofthe DC-DC converter, and the path of the wiring for electricallyconnecting the anode of the Schottky barrier diode D1 and the groundwiring become long, to thereby increase the parasitic inductances Lk andLa on these wirings, with the result that the effect of an improvementin the voltage conversion efficiency is reduced due to the connection ofthe Schottky barrier diode D1. That is, it is a problem that thecommutation of a load current into the Schottky barrier diode D1 duringthe dead time (a period in which both power MOSs Q1 and Q2 are turnedoff) of the non-insulated DC-DC converter 1 is inhibited by the wiringinductances Lk and La, so that even though the Schottky barrier diodeD1, which has a lower forward voltage Vf than the parasitic diode Dp, isconnected, a sufficient effect cannot be obtained upon a reduction indiode conduction loss and a reduction in diode recovery loss due to theincrease is speed of the reverse recovery time (trr). In thenon-insulated DC-DC converter, a drive current necessary for thenon-insulated DC-DC converter has recently been increased with anincrease in the drive current of the load circuit 4. Further, theoperating frequency of the non-insulated DC-DC converter is alsobecoming high from the viewpoint that a constant voltage is stablysupplied and from the viewpoint that the coil L1 and the capacitor C1are smaller in size (the overall dimension is scaled down by reducingthe number of elements). Therefore, the problem caused by the wiringinductances Lk and La is becoming increasingly noticeable.

The second problem is a problem that arises in the driver chip(semiconductor chip 5 c) formed with the driver circuits 3 a and 3 b dueto the commutation of the load current flowing into the Schottky barrierdiode D1 being inhibited by the wiring inductances Lk and La. Thisproblem will be explained with reference to FIGS. 5 and 6. FIG. 5 is adiagram of a non-insulated DC-DC converter including driver circuits 3 aand 3 b and their output stages, and FIG. 6 is a diagram showing theoperation of a parasitic element or device of the semiconductor chip 5 cformed with the driver circuit 3 a. Each of terminals ET4 shown in FIG.5 is a terminal for the supply of the reference potential GND, and aterminal ET5 is an output terminal of the non-insulated DC-DC converter1. A terminal ET6 (BOOT) is a terminal for a bootstrap circuit, forcontrolling the gate of a power MOS Q1 for a highside switch. Since thepotential at the source of the power MOS Q1 has a value that is higherthan the reference potential GND (floating), a voltage is supplied fromthe terminal ET6 with respect to such a voltage. Symbol UVL indicates aprotection circuit which, when the voltage between the terminals ET5 andET6 does not reach a certain predetermined reference voltage, has thefunction of determining if an abnormal or improper state is occurringand automatically stopping the generation of an output of thenon-insulated DC-DC converter 1. Symbol GH indicates the gate of thepower MOS Q1 for the highside switch. A semiconductor substrate SUBshown in FIG. 6 corresponds to a substrate section of the semiconductorchip 5 c and is formed of, for example, a p-type silicon (Si)monocrystal. Symbols NISO indicate n-type semiconductor regions, symbolsPW indicate p-type semiconductor regions (p wells), symbol CHN indicatesan n-type semiconductor region in which a channel of a p channel powerMOS Q3 is formed, symbol CHP indicates a p-type semiconductor region inwhich a channel of an n channel power MOS Q4 is formed, symbols PR1indicate P⁺ type semiconductor regions for the source/drain of the pchannel power MOS Q3, and symbols NR1 indicate n+type semiconductorregions for the source/drain of the n channel power MOS Q4.

In such a configuration, a load current is supplied through the Schottkybarrier diode D1 at the dead times of both power MOSs Q1 and Q2.However, upon heavy loading, when the load current flowing through theSchottky barrier diode D1 is reduced due to the wiring inductances Lkand La, as described above, and the load current flows even into aparasitic diode (body diode) Dp of a power MOS Q2 for a lowside switch,the potential at the terminal ET5 (VSWH) on the output side of thenon-insulated DC-DC converter 1 is reduced to a negative potential by aforward voltage Vf of the parasitic diode Dp, and the output of thedriver chip (control IC) electrically connected to the power MOS Q1 isalso brought to a negative potential, so that a parasitic npn bipolartransistor Qp is turned on within the semiconductor chip 5 c, therebycausing a problem in that the current consumption of the driver chipincreases. Further, a problem arises in that, when the amount ofpulling-out of an electrical charge from the terminal ET6 increases andthe potential between the terminals ET5 and ET6 becomes lower than apredetermined potential value, the protection circuit UVL isautomatically operated so that a malfunction occurs in that theoperation of the power MOS Q1 is stopped.

The third problem is that, since the Schottky barrier diode D1 is formedas a separate package, the system increases in size. A problem arises inthat, particularly when a plurality of non-insulated DC-DC convertersare electrically connected to one load circuit 4 to construct an overallsystem, a reduction in the size of the overall system is impaired wherethe Schottky barrier diode D1 is connected to each individualnon-insulated DC-DC converter in the separate package.

The fourth problem is that, since the power MOS Q1 for the highsideswitch, the power MOS Q2 for the lowside switch, the driver circuits 3 aand 3 b and the Schottky barrier diode D1 are accommodated in discretepackages 6 a through 6 d, the wiring paths extending among therespective semiconductor chips 5 a through 5 d (packages 6 a through 6d) become long and the parasitic inductances on their wiring sectionsincrease, so that the non-insulated DC-DC converter 50A experiences areduced voltage conversion efficiency.

FIG. 7 is an equivalent circuit diagram showing the parasitic inductancecomponents on the non-insulated DC-DC converter 50A. Symbols LdH, LgH,LsH, LdL, LgL and LsL indicate parasitic inductances on wirings or thelike of the packages of the power MOSs Q1 and Q2, and a printed wiringboard. Symbol VgH indicates a gate voltage for turning on the power MOSQ1, and symbol VgL indicates a gate voltage for turning on the power MOSQ2. Due to the influences of the parasitic inductance LsH on the sourceside of the power MOS Q1 for the highside switch, the parasiticinductance LgH on the gate side thereof, and the parasitic inductanceLsL on the source side of the power MOS Q2 for the lowside switch, thevoltage conversion efficiency of the non-insulated DC-DC converter 50Ais decreased. Particularly, when the parasitic inductance LsH increases,a turn-on loss and a turn-off loss (turn-on loss in particular) of thepower MOS Q1 for the highside switch become significantly large, so thatthe voltage conversion efficiency of the non-insulated DC-DC converter50A is significantly reduced. Since the turn-on loss and the turn-offloss are proportional to the frequency and the output current, losscomponents become large as the increase in the current of thenon-insulated DC-DC converter 50A and the increase in its frequencyproceed as described above.

A description will next be made of the cause of the problem in which,when the parasitic inductance LsH increases, turn-on and turn-off becomeslow so that the turn-on loss and the turn-off loss increase. FIG. 8 isa diagram illustrating the circuit operation of the non-insulated DC-DCconverter 50A, and FIG. 9 is a diagram showing a device section at thetime of the circuit operation shown in FIG. 8.

When the gate voltage of the power MOS Q1 for the highside switchexceeds a threshold voltage and a current (first current) 11 starts toflow from a drain region DR1 of the power MOS Q1 to a source region SR1thereof, a back electromotive force (LsH×di/dt) is generated due to theparasitic inductance LsH, and, hence, the source potential of the powerMOS Q1 for the highside switch becomes high as compared with the outputnode N1. Since the gate voltage of the power MOS Q1 is supplied from thedriver circuit 3 a with the output node N1 as the reference, the voltageapplied between a gate electrode G1 connected to the gate of the powerMOS Q1 for the highside switch and the source region SR1 becomes lowerthan the gate voltage VgH. Therefore, a loss of the current 11 isgenerated since the channel resistance R1 of the power MOS Q1 for thehighside switch has not been sufficiently lowered. That is, the turn-ontime becomes long. The reason why the turn-on loss and the turn-off lossincrease due to the increases in power and frequency, as describedabove, is that the back electromotive force (LsH×di/dt) increases due tothe increases in power and frequency.

Since the power MOS Q1 for the highside switch has a switch function forstoring energy into the coil L1 that supplies power to the output (theinput of the load circuit 4) of the non-insulated DC-DC converter 50A, aspeeding up of the switching operation is required upon an increase infrequency. However, since the parasitic inductance LgH is presentbetween the driver circuit 3 a and the power MOS Q1, the switchingoperation becomes slow. That is, a switching loss is produced, and theefficiency of voltage conversion is reduced.

On the other hand, the power MOS Q2 for the lowside switch has aconfiguration in which it is hard to cause the above-described switchingloss, as compared with the power MOS Q1. That is, when the power MOS Q1for the highside switch is turned off, a current (second current) 12flows into the output side through the Schottky barrier diode D1 that isparallel-connected to the power MOS Q2 for the lowside switch. Further,a current (second current) 122 flows from the reference potential GND toa drain region DR2 of the power MOS Q2 through the parasitic diode Dp.When the gate voltage VgL is applied to its corresponding gate electrodeG2 connected to the gate of the power MOS Q2 for the lowside switch toturn on the power MOS Q2 in this state, a current (third current) 123flows from a source region SR2 of the power MOS Q2 to the drain regionDR2 through a channel region thereof. However, since the currents 121and 122 already flow before the current 123 flows and the amount ofchange in current per unit time, at the time that the current 123 flows,is small, the back electromotive force produced due to the parasiticinductance LsL is negligibly small, thus leading to no substantial loss.However, when the parasitic inductances La and Lk parasitized on theanode and cathode sides of the Schottky barrier diode D1 are large, asdescribed above, the current 121 flowing on the Schottky barrier diodeD1 side becomes small, and, hence, a sufficient effect cannot beobtained by connecting the Schottky barrier diode D1, which has asmaller forward voltage than the parasitic diode Dp. Incidentally, whilethe parasitic diode Dp exists even in the power MOS Q1 for the highsideswitch, in a like manner, the parasitic diode Dp on the power MOS Q1 forthe highside switch is formed with an anode on the source region SR1side of the power MOS Q1 and a cathode on the drain region DR1 sidethereof. Thus, the parasitic diode Dp is not connected in the forwarddirection with respect to the same direction as the current (firstcurrent) 11 that flows from the drain region DR1 of the power MOS Q1 tothe source region SR1 thereof. Therefore, no current flows through thepower MOS Q1 before the gate voltage VgH is applied to turn on the powerMOS Q1, and the amount of change in current per unit time is notreduced, thus leading to the occurrence of a switching loss.

The power MOS Q2 is a rectifying transistor for the non-insulated DC-DCconverter 50A and has the function of performing rectification in syncwith a frequency sent from the control circuit 2 with its resistancebeing held low. Therefore, since the on time of the power MOS Q2 islonger than that of the power MOS Q1, as described above, a loss causedby its on resistance rather than the switching loss becomes remarkable,and so there is a need to reduce the on resistance. However, since awiring resistance (wiring impedance) caused by the parasitic inductanceLsL exists between the power MOS Q2 and the terminal (second powersupply terminal) ET4, which is supplied with the reference potentialGND, the on resistance increases and the efficiency of the currentconversion is reduced.

Thus, the present first embodiment is constructed as illustrated in FIG.10 by way of example, wherein the power MOS Q1 for the highside switch,the power MOS Q2 for the lowside switch, the driver circuits 3 a and 3 band the Schottky barrier diode D1 that constitute the non-insulatedDC-DC converter 1 are respectively formed in discrete semiconductorchips 5 a through 5 d (first through fourth semiconductor chips), andthe plurality of semiconductor chips 5 a through 5 d are accommodated inthe same package 6. First, the power MOS Q2 for the lowside switch andthe Schottky barrier diode D1 are accommodated in the same package 6.Consequently, the wiring extending between the power MOS Q2 and theSchottky barrier diode D1 can be shortened as compared with aconstruction in which they are respectively accommodated in discretepackages. Therefore, it is possible to reduce the parasitic inductancesLa and Lk on the wiring. Thus, since the effect of the Schottky barrierdiode D1 can be sufficiently brought about, the diode conduction loss,and the diode recovery loss caused due to a reverse recovery time (trr)being made fast, can be reduced, and the voltage conversion efficiencyof the non-insulated DC-DC converter 1 can be improved. Since the effectof the Schottky barrier diode D1 can be sufficiently brought about, itis possible to suppress or prevent the turning on of a parasitic npntype bipolar transistor Qp within the semiconductor chip 5 c formed withthe driver circuits 3 a and 3 b and to suppress or prevent an increasein the current consumption of a circuit lying within the semiconductorchip 5 a. It is further possible to suppress a pulling out of anelectrical charge from the terminal ET6, to inhibit or prevent thepotential between both terminals ET5 and ET6 from becoming lower than aprescribed potential value, and to suppress or prevent a stop operation(malfunction) of the power MOS Q1 due to the operation of the protectioncircuit UVL. Therefore, the reliability of operation of thenon-insulated DC-DC converter 1 can be enhanced. Furthermore, since theSchottky barrier diode D1 is accommodated in the same package 6, thesystem can be small-sized.

Accommodating the semiconductor chips 5 a through 5 d in the samepackage 6 makes it possible to shorten the paths for wirings of therespective semiconductor chips 5 a through 5 d. It is thus possible toreduce the parasitic inductances LdH, LgH, LsH, LdL, LgL and LsL ontheir wirings. Therefore, the voltage conversion efficiency of thenon-insulated DC-DC converter 1 can be enhanced. Also, the non-insulatedDC-DC converter 1 can be miniaturized.

When attention is now paid only to a size reduction and a reduction ininductance, it can also be considered that the power MOS Q2 for thelowside switch and the Schottky barrier diode D1 may be preferablyformed in the same semiconductor chip. However, it is not possible tosufficiently bring out their device characteristics in this case. Sincethe thickness of an epitaxial layer is required to some degree to ensurea withstand voltage on the Schottky barrier diode D1 side in particular,the performance of the power MOS Q2 for the lowside switch is degradedwhere the MOS Q2 is provided in the semiconductor chip formed with theSchottky barrier diode D1. Further, a problem also arises in that themanufacturing process becomes complex, time is taken to manufacture eachsemiconductor chip, and its cost increases. In the present embodiment,from such a viewpoint, the power MOS Q2 for the lowside switch and theSchottky barrier diode D1 are respectively formed in the discretesemiconductor chips 5 b and 5 a in parts. Thus, their devicecharacteristics can sufficiently be brought out as compared with thecase in which the power MOS Q2 for the lowside switch and the Schottkybarrier diode D1 are formed in the same semiconductor chip. Therefore,it is possible to enhance the operating characteristics of thenon-insulated DC-DC converter 1. Since the manufacturing process of thenon-insulated DC-DC converter 1 can be facilitated, the time required tomanufacture the non-insulated DC-DC converter 1 can be shortened, andits cost can be lowered.

If attention is paid only to a size reduction and a reduction ininductance in like manner, it is then considered that the power MOS Q1for the highside switch and the power MOS Q2 for the lowside switch maypreferably be formed in the same semiconductor chip. Likewise, even inthis case, however, their device characteristics cannot be brought outsufficiently where the respective transistors are formed in the samesemiconductor chip. Further, a problem also arises in that themanufacturing process becomes complex, the time required to manufacturethe semiconductor chip is increased, and its cost increases. Since thepower MOS Q2 for the lowside switch is longer than the power MOS Q1 forthe highside switch in on time, as mentioned above, it is easy togenerate heat. Thus, there is also a fear that, when both power MOSs Q1and Q2 are formed in the same semiconductor chip, the heat generatedupon the operation of the power MOS Q2 for the lowside switch exerts aninfluence on the power MOS Q1 for the highside switch through thesemiconductor substrate. In the present embodiment, from such aviewpoint, the power MOS Q1 for the highside switch, the power MOS Q2for the lowside switch and the driver circuits 3 a and 3 b are formed intheir corresponding discrete semiconductor chips 5 a through 5 c inparts. Thus, their device characteristics can sufficiently be broughtout as compared with the case where the power MOS Q1 for the highsideswitch, the power MOS Q2 for the lowside switch and the driver circuits3 a and 3 b are formed in the same semiconductor chip. Since themanufacturing process of the non-insulated DC-DC converter 1 can befacilitated, the time required to manufacture the non-insulated DC-DCconverter 1 can be shortened and its cost can be reduced. Since it ispossible to prevent the power MOS Q1 for the highside switch and thedriver circuits 3 a and 3 b from being adversely affected by heatgenerated upon the operation of the power MOS Q2 for the lowside switch,the stability of the operation of the non-insulated DC-DC converter 1can be enhanced.

Incidentally, since the driver circuits 3 a and 3 b are alternatelyoperated in sync with each other, they are formed in the samesemiconductor chip 5 c in terms of the stability of an overall circuitoperation.

Meanwhile, it is important that the Schottky barrier diode D1 isaccommodated in the same package 6 as the power MOSs Q1 and Q2 and thedriver circuits 3 a and 3 b as described above in order to enhance thevoltage conversion efficiency of the non-insulated DC-DC converter 1.However, a sufficient effect cannot be obtained in terms of theimprovement in voltage conversion efficiency where the Schottky barrierdiode D1 is merely accommodated in the same package 6. A descriptionwill therefore be made of an example of a specific configuration of theinside of the package 6 that is important to enhance the voltageconversion efficiency of the non-insulated DC-DC converter 1.

FIG. 11 is an overall plan view showing a main surface side of thepackage 6, FIG. 12 is a side view of the package 6 shown in FIG. 11,FIG. 13 is an overall plan view showing a back surface side of thepackage 6 shown in FIG. 11, and FIG. 14 is a perspective view showing anoutward appearance of the package 6 shown in FIG. 11.

The package 6 of the present embodiment is provided in the form of, forexample, a QFN (Quad Flat Non-leaded package) configuration. However,the package is not limited to a QFN configuration and can be changed invarious ways. The package may be provided as a flat packageconfiguration, like a QFP (Quad Flat Package) or an SOP (Small Out-linePackage) or the like.

A resin molded body MB that constitutes the package 6 has an outwardappearance shaped in the form of a thin plate. The resin molded body MBis formed of, for example, an epoxy resin. As a material for the resinmolded body MB, for example, a phenol curing agent, silicone rubber anda biphenyl thermosetting resin added to a filler or the like may be usedfor reasons such as a reduction in stress, etc. As a method of formingthe resin molded body MB, a transfer molding method suitable for massproduction is used. The back surfaces of three die pads 7 a 1, 7 a 2 and7 a 3 (first through third chip mounting sections) whose plane or flatsurfaces are substantially rectangular, for example, are exposed from aback surface of the resin molded body MB. Parts of a plurality of leads(external terminals) 7 b are exposed from the four side surfaces of theresin molded body MB and the outer periphery of the back surface thereofalong the outer periphery of the resin molded body MB. The die pads 7 a1, 7 a 2 and 7 a 3 and the leads 7 b are formed with a metal materiallike, for example, a 42-alloy or the like as a main material. Thethickness of each of the die pads is about 200 μm, for example. Asanother material for the die pads 7 a 1, 7 a 2 and 7 a 3 and the leads 7b, for example, one in which copper (Cu) or the surface thereof isplated with nickel (Ni), palladium (Pd) and gold (Au) in order from thesurface, may also be used. As will be described later, the semiconductorchips 5 a and 5 b are mounted over their corresponding main surfaces ofthe die pads 7 a 1 and 7 a 2. Further, the semiconductor chips 5 c and 5d are mounted over their corresponding main surface of the die pad 7 a3. A positioning taper TR1 (index mark) is formed at one corner of thedie pad 7 a 3. The taper TR1 is used, for example, for face-to-facealignment at the time of shipment of the package 6 and provides adistinction between the main and back surfaces of the package 6 when atrade mark or the like is applied onto the package 6. The taper TR1 isformed by etching, for example. There is a fear that, since the die pads7 a 1 and 7 a 2, with the semiconductor chips 5 a and 5 b formed withthe power MOSs Q1 and Q2 being mounted thereon, respectively correspondto sections supplied with the currents 11 and 12 from the first andsecond power supply terminals, their outer dimensions become small whenthe taper TR1 is formed, and, hence, this exerts an influence on currentcharacteristics. On the other hand, since no dynamic current flowsthrough the die pad 7 a 3 and the potential is fixed, it is notnecessary to worry about or care about the current characteristics somuch. Therefore, the positioning taper TR1 is preferably formed at somearea of the die pad 7 a 3.

Incidentally, the back surfaces (surfaces opposite to the surfaces overwhich the semiconductor chips 5 a, 5 b and 5 c are mounted) and the backsurfaces (junction surface bonded to terminals of a wiring board) of theleads 7 b both exist in the mounting surface (surface opposite to thewiring board when the package 6 is mounted over the wiring board) of thepackage 6.

FIG. 15 is an overall plan view showing the main surface side of thepackage 6 as seen through the inside of the package 6, FIG. 16 is across-sectional view taken along line Y1-Y1 of FIG. 15, and FIG. 17 is across-sectional view taken along X1-X1 of FIG. 15. Incidentally, whileFIG. 15 is a plan view, the die pads 7 a 1 through 7 a 3, leads 7 b andwiring section 7 c have been hatched to make it easy to see theseelements in the drawings.

The three die pads 7 a 1 through 7 a 3 (first through third chipmounting sections); a plurality of semiconductor chips 5 a through 5 drespectively mounted over the die pads 7 a 1 through 7 a 3 as will bedescribed later, and bonding wires (hereinafter called simply “wires”)WA1 through WA3 and WB1 through WB6 for electrically connecting bondingpads (hereinafter called simply “pads”) BP1 through BP11 of thesemiconductor chips 5 a through 5 d to respective parts or sections areencapsulated in the package 6.

The die pads 7 a 1 through 7 a 3 are disposed adjacent to one another ina state in which they are spaced away from one another at predeterminedintervals. Heat generated when the semiconductor chips 5 a through 5 care operated is principally radiated from the back surface sides of thedie pads 7 a 1 through 7 a 3 to the outside through the die pads 7 a 1through 7 a 3, as viewed from the back surfaces of the semiconductorchips 5 a through 5 c. Therefore, the die pads 7 a 1 through 7 a 3 arerespectively formed to be greater in area than the areas of thesemiconductor chips 5 a through 5 c. Thus, the radiation of thenon-insulated DC-DC converter 1 can be improved and its operationalstability can be enhanced. Some of the outer peripheries on the backsurface sides of the die pads 7 a 1 through 7 a 3 and leads 7 b areformed with half etching areas in such a manner that their thicknessesbecome thin. This is done to enhance the adhesion between the die pads 7a 1 through 7 a 3 and leads 7 b and the resin molded body MB so as toreduce or prevent peeling of the die pads 7 a 1 through 7 a 3 and leads7 b and deformation and failures thereof.

The semiconductor chip 5 a formed with the power MOS Q1 for the highsideswitch is disposed over the upper left die pad 7 a 1 shown in FIG. 15 ina state in which its main surface is turned up. The pads BP1 for asource electrode of the power MOS Q1 and the pad BP2 for its gateelectrode are disposed over the main surface of the semiconductor chip 5a. The pads BP1 are electrically connected to the die pad 7 a 2 throughthe plurality of wires WA1, and they are electrically connected to thepads BP3 for the source electrode of the driver circuit 3 a of thesemiconductor chip 5 c through the plurality of wires WB1. The pad BP2for the gate electrode is electrically connected to the pads BP4 for theoutput (drain) electrode of the driver circuit 3 a of the semiconductorchip 5 c through the plurality of wires WB2. Further, the back surfaceof the semiconductor chip 5 a is formed as a drain electrode connectedto the drain of the power MOS Q1 and is electrically connected to theplurality of leads 7 b 1 (7 b) formed integrally with the outerperiphery of the die pad 7 a 1 through the die pad 7 a 1. The leads 7 b1 are electrically connected to the terminal ET1. Incidentally, thewires WA1 are disposed alternately in such a manner that the wires WA1adjacent in a first direction X are alternately connected to the upperand lower pads BP1.

The semiconductor chip 5 a formed with the power MOS Q1 for the highsideswitch is shaped in the form of a rectangle in which the length thereofin the first direction X of FIG. 15 is longer than that in a seconddirection Y orthogonal thereto. The semiconductor chip 5 a is disposedout of position so as to approach the die pad 7 a 2 from the center ofthe die pad 7 a 1. That is, the semiconductor chip 5 a is disposed so asto approach one side of the die pad 7 a 1 adjacent to one side of thedie pad 7 a 2. Disposing the semiconductor chip 5 a so as to approachthe die pad 7 a 2 in this way makes it possible to shorten the lengthsof the wires WA1 for electrically connecting the pads BP1 for the sourceelectrode of the power MOS Q1 and the die pad 7 a 2. Therefore, it ispossible to reduce the parasitic inductance LsH developed between thesource of the power MOS Q1 and the drain of the power MOS Q2. Thesemiconductor chip 5 a is disposed in such a manner that its long sideextends along the long side adjacent thereto, of the die pad 7 a 2.Thus, since the length in which the pads BP1 for the source electrode ofthe semiconductor chip 5 a and the die pad 7 a 2 are opposed to eachother, can be ensured, the inductance LsH formed between the source ofthe power MOS Q1 and the drain of the power MOS Q2 can be reduced byplacing the wires WA1 in plural form. Since the length of a gate wiringpattern extending in the second direction Y of FIG. 15 and formed ofpolysilicon, can be shortened owing to the formation of thesemiconductor chip 5 a in the form of a rectangle, the gate resistanceof the power MOS Q1 can be reduced. Further, the semiconductor chip 5 ais disposed in such a manner that the distance between the semiconductorchips 5 a and 5 c becomes shorter than the distance between thesemiconductor chips 5 a and 5 b, and, particularly, the distance betweenthe pad BP2 for the gate electrode of the semiconductor chip 5 a andeach pad BP4 for the output electrode of the semiconductor chip 5 cdecreases. This is a construction having considered that in the powerMOS Q1 for the highside switch, an increase in inductance of its gategreatly exerts an influence on an increase in switching loss. By placingthe semiconductor chip 5 a so as to approach the semiconductor chip 5 c,the length of each wire WB2 for electrically connecting the pad BP2 forthe gate electrode of the power MOS Q1 and its corresponding pad BP4 forthe output electrode of the driver circuit 3 a can be shortened. It istherefore possible to reduce the parasitic inductance LgH on the gate ofthe power MOS Q1 and reduce the switching loss of the power MOS Q1.Owing to the above placement of the semiconductor chip 5 a, theswitching loss of the power MOS Q1 can be reduced and the voltageconversion efficiency of the non-insulated DC-DC converter 1 can beenhanced.

The two types of wires WA1 and WB1 are electrically connected to thepads BP1 for the source electrode of the semiconductor chip 5 a. Thatis, the wires electrically connected to the pads BP1 for the sourceelectrode of the semiconductor chip 5 a are divided into the wires WA1connected to the die pad 7 a 2 and the wires WB1 connected to the sourceof the driver circuit 3 a. Thus, since paths for a current 11 that flowsfrom the source of the power MOS Q1 to an output terminal through thedie pad 7 a 2, and a current that flows toward the driver circuit 3 acan be dispersed, current loads that occur in the respective wires WA1and WB1 can be reduced. Therefore, since the parasitic inductanceproduced between the power MOS Q1 and the driver circuit 3 a can bereduced, the switching loss can be further improved.

While the wires WA1, WB1 and WB2 are formed, for example, of gold (Au),the wires WA1 are thicker than the wires WB1 and WB2. Thus, since thewiring inductance on the source side of the power MOS Q1 can be reduced,the switching loss of the non-insulated DC-DC converter 1 can be reducedand its voltage conversion efficiency can be enhanced.

The semiconductor chip 5 b, formed with the power MOS Q2 for the lowsideswitch, and the semiconductor chip 5 d, formed with the Schottky barrierdiode D1, are disposed over the downside die pad 7 a 2 of FIG. 15, whichis largest in area, in a state in which their main surfaces are turnedup. Pads BP5 a and BP5 b for a source electrode of the power MOS Q2, anda pad BP6 for its gate electrode are disposed over the main surface ofthe semiconductor chip 5 b. The pad BP5 a for the source electrode iselectrically connected to leads 7 b 2 (7 b) through a plurality of wiresWA2, and the pad BP5 b is electrically connected to pads BP7 for asource electrode of the driver circuit 3 b of the semiconductor chip 5 cthrough a plurality of wires WB3. The pad BP6 for the gate electrode iselectrically connected to pads BP8 for the output (drain) of the drivercircuit 3 b of the semiconductor chip 5 c through a plurality of wiresWB4. Further, the back surface of the semiconductor chip 5 b serves as adrain electrode of the power MOS Q2 and is electrically is connected toa plurality of leads 7 b 3 (7 b) that are formed integrally with theouter periphery of the die pad 7 a 2 through the die pad 7 a 2. Theleads 7 b 3 are electrically connected to the terminal ET5 for theoutput. On the other hand, a pad (corresponding to an area in whichwires are connected) BP9 for an anode electrode of the Schottky barrierdiode D1 is disposed over the main surface of the semiconductor chip 5d. The pad BP9 for the anode electrode is electrically connected to thepad BP5 a for the source electrode of the semiconductor chip 5 b throughthe plurality of wires WA3. The back surface of the semiconductor chip 5d serves as a cathode electrode of the Schottky barrier diode D1 and iselectrically connected to the leads 7 b 3 through the die pad 7 a 2.

The semiconductor chip 5 b, formed with the power MOS Q2 for the lowsideswitch, is shaped in the form of a rectangle in which the length thereofin the first direction X in FIG. 15 is longer than that in the seconddirection Y. While the semiconductor chip 5 b is disposed along thesemiconductor chip 5 a, it is spaced away from the semiconductor chip 5a and is disposed so as to be shifted from the center of the die pad 7 a2 so as to approach the leads 7 b 2. That is, the semiconductor chip 5 bis disposed so as to approach the corner (the left corner of FIG. 15) ofthe die pad 7 a 2 close to the leads 7 b 2 connected with the terminalET4 that is supplied with the reference potential GND. The length, inthe second direction Y, of the semiconductor chip 5 b is substantiallyequal to the length, in the second direction Y, of a frame section towhich the plurality of leads 7 b 2 are connected. Further, the length,in the first direction X, of the semiconductor chip 5 b is substantiallyequal to the length, in the first direction X, of the frame section towhich the plural leads 7 b 2 are connected. With such a configuration,the lengths of the wires WA2 for electrically connecting the pad BP5 afor the source electrode of the power MOS Q2 and the leads 7 b 2 can beshortened. The two of the long and short sides of the semiconductor chip5 a, which intersect each other, are disposed along a layoutconfiguration (flat L shape) of the plural leads 7 b 2. In particular,the pad BP5 a for the source electrode of the power MOS Q2 is shaped soas to extend along the layout configuration of the plural leads 7 b 2.Thus, since the length, in which the pad BP5 a and a group of the pluralleads 7 b 2 are opposed, can be ensured to be long, the wires WA2 can bedisposed in plural form. Further, the plurality of leads 7 b aredisposed along the two sides intersecting each other of the die pad 7 a2, and they are connected to a flat L-shaped wiring section 7 cextending along the two sides. Since the volume increases rather thanthe division of the plural leads 7 b by collectively connecting theplural leads 7 b to the wiring section 7 c in this way, each wiringresistance can be reduced and the reference potential GND can beenhanced. Such a configuration takes into consideration the fact that anincrease in on resistance on the source side of the power MOS Q2 for thelowside switch greatly exerts an influence on an increase in switchingloss. Since the on resistance on the source side of the power MOS Q2 canbe reduced with the above-described configuration, the conduction lossof the power MOS Q2 can be reduced. Since variations in parasiticimpedance that occur in each wire WA2 can be reduced, variations in themagnitude of a current flowing through the wire WA2 can also be reduced.Owing to these considerations, the voltage conversion efficiency of thenon-insulated DC-DC converter 1 can be enhanced. Further, the referencepotential GND can be enhanced and the operational stability of thenon-insulated DC-DC converter 1 can be improved.

Since the amount of heat generated during operation of the power MOS Q2for the lowside switch is the highest, as described above, the power MOSQ2 is mounted over the die pad 7 a 2 that is largest in area. Thus,since the radiation of heat generated at the power MOS Q2 can beimproved, the operational stability of the non-insulated DC-DC converter1 can be enhanced.

The semiconductor chip 5 d, formed with the Schottky barrier diode D1,is mounted over the die pad 7 a 2 with the semiconductor chip 5 b, whichis largest in chip size, being mounted thereon. This is done for thefollowing reasons. First, the Schottky barrier diode D1 is mounted onthe die pad 7 a 2 that is large in area. Consequently, the cathodeelectrode of the Schottky barrier diode D1 is electrically connected toits corresponding output wiring and the drain electrode of the power MOSQ1 through the die pad 7 a 2. Therefore, it is possible to greatlyreduce the parasitic inductance Lk parasitic on the cathode. Since thesemiconductor chip 5 d, formed with the Schottky barrier diode D1, canbe disposed near the semiconductor chip 5 b, formed with the power MOSQ2, the lengths of the wires WA3 for electrically connecting the pad BP9for the anode electrode of the Schottky barrier diode D1 and the BP5 afor the source electrode of the power MOS Q2 can be shortened, and,hence, a parasitic inductance La on the anode can be reduced. The padBP9 for the anode electrode of the Schottky barrier diode D1 is shapedso as to extend along the pad BP5 a for the source electrode of thepower MOS Q2. Thus, since the length at which the pad BP9 and the padBP5 a are opposed can be ensured to be long, the wires WA3 can bedisposed in plural form. Further, since the semiconductor chip 5 d isdisposed along the short side of the semiconductor chip 5 b, the numberof the wires WA2 for electrically connecting the pad BP5 a for thesource electrode of the power MOS Q2 for the lowside switch of thesemiconductor chip 5 b and the leads 7 b 2 is not reduced even thoughthe semiconductor chip 5 d is placed in the die pad 7 a 2 with thesemiconductor chip 5 b disposed therein. Therefore, the on resistance ofthe power MOS Q2 is not reduced. Since the inductances La and Lk can bereduced owing to a configuration such as described above, the effect ofthe Schottky barrier diode D1 can be sufficiently brought out asdescribed above. Further, the diode conduction loss and the dioderecovery loss due to the reverse recovery time (trr) being made fast canbe reduced, and the voltage conversion efficiency of the non-insulatedDC-DC converter 1 can be enhanced. Since the inductances La and Lk canbe reduced, the noise can be reduced.

The pad BP9 for the anode electrode of the semiconductor chip 5 d andthe pad BP5 a of the semiconductor chip 5 b are electrically connectedby the wires WA3. Consequently, the heat generated at the power MOS Q2,which is high in the generated amount of heat, can be dispersed into theSchottky barrier diode D1 in which heat is not so generated. Thus, thevoltage conversion efficiency and operational stability of thenon-insulated DC-DC converter 1 can be enhanced.

Further, the pad BP9 for the anode electrode of the semiconductor chip 5d is formed in such a manner that the area thereof becomes smaller thanthe area of a region covered with an insulating film around the pad BP9in the main surface of the semiconductor chip 5 d. That is, the area ofthe pad BP9 formed of a metal that has a low adhesion relative to theresin molded body MB is configured as the minimum region necessary forthe connections of the wires WA3. Consequently, the adhesion of theresin molded body MB can be enhanced.

While the wires WA2, WA3, WB3 and WB4 are all formed, for example, ofgold (Au), the wires WA2 and WA3 are thicker than the wires WB3 and WB4.Thus, since the wiring inductance on the source side of the power MOS Q2can be reduced owing to the use of the thick wire WA2 as the wireelectrically connected to the source of the power MOS Q2, it is possibleto reduce the on resistance of the power MOS Q2 and enhance the voltageconversion efficiency. Since the wiring resistance on the anode side ofthe Schottky barrier diode D1 can be reduced owing to the use of thethick wire WA3 as the wire electrically connected to the anode of theSchottky barrier diode D1, the loss of the non-insulated DC-DC converter1 can be reduced, and, hence, its voltage conversion efficiency can beenhanced.

The semiconductor chip 5 c, formed with the driver circuits 3 a and 3 b,are disposed over the upper right die pad 7 a 3 of FIG. 15, which issmallest in area, in a state in which its main surface is turned up.Pads BP10 for the respective signal input (gate) electrodes of thedriver circuits 3 a and 3 b, and the pads BP11 for their sourceelectrodes are disposed over the main surface of the semiconductor chip5 c in addition to the pads BP3, BP4, BP7 and BP8. The pads BP10 for thegate electrodes are electrically connected to the corresponding leads 7b 4 (7 b) through the plural wires WB5. The pads BP11 for the sourceelectrodes are electrically connected to their corresponding leads 7 b 5(7 b) formed integrally with the die pad 7 a 3 via the plurality ofwires WB6.

The semiconductor chip 5 c, formed with the driver circuits 3 a and 3 b,is also shaped in the form of a plane rectangle. The pads BP3, BP4, BP7and BP8 connected to the power MOSs Q1 and Q2 are disposed over the mainsurface of the semiconductor chip 5 c along the two sides located on thesides adjacent to the respective semiconductor chips 5 a and 5 b. Thus,since the lengths of the wires WB1, WB2, WB3 and WB4 can further beshortened, the parasitic inductances LgH, LsH, LgL and LsL produced inthe wiring paths can be further reduced. Since it is desired to reducethe switching loss rather than the on resistance in the semiconductorchip 5 a, the wires WB1 and WB2, which are respectively electricallyconnected to the source and gate of the power MOS Q1, are formed to beshorter than the wires WB3 and WB4, which are respectively electricallyconnected to the source and gate of the power MOS Q2 even with respectto the wires WB1, WB2, WB3 and WB4, in addition to the point which wasdescribed above, that the semiconductor chips are disposed in such amanner that the distance between the semiconductor chips 5 c and 5 abecomes short or decreases as the distance between the semiconductorchips 5 c and 5 b.

The semiconductor chips 5 a through 5 c are different in outer size(area) in terms of differences among their characteristics. The outersize of the semiconductor chip 5 a is formed to be larger than that ofthe semiconductor chip 5 c. The outer size of the semiconductor chip 5 bis formed to be larger than that of the semiconductor chip 5 a. Sincethe semiconductor chip 5 c having the driver circuits 3 a and 3 b is acontrol circuit for controlling the gates of the power MOSs Q1 and Q2,it is described to reduce the outer size of the same device as much aspossible in consideration of the size of the overall package. On theother hand, it is desirable to set the on resistance produced in eachtransistor as low as possible because the currents 11 and 12 flowthrough the power MOSs Q1 and Q2. Reducing the on resistance can berealized by expanding to channel width per unit cell area. Therefore,the outer sizes of the semiconductor chips 5 a and 5 b are formed to belarger than the outer size of the semiconductor chip 5 c. Further, sincethe power MOS Q2 for the lowside switch is longer in on time than thepower MOS Q1 for the highside switch, as shown in FIG. 3, there is aneed to further reduce the on resistance of the power MOS Q2 as comparedwith the on resistance of the power MOS Q1. Therefore, the outer size ofthe semiconductor chip 5 b is formed to be larger than that of thesemiconductor chip 5 a.

Incidentally, there is a fear that, while the wires WA1 through WA3 andWB1 through WB6 are connected by, for example, an ultrasonicthermocompression bonding method, bonding failures occur whereultrasonic energy is not well transferred to wiring bonding portions ofthe die pads 7 a 1 through 7 a 3 and leads 7 b. Therefore, they arewire-bonded in avoidance of the half etching areas. It is thus possibleto reduce or prevent bonding failures.

Thin wires are used for the wires WB1 through WB6 connected to thesemiconductor chip 5 c because, when thick wires are used therefor, thepads BP3, BP4, BP7, BP8, BP10 and BP11 and the like must be made large,so that the size of each chip increases and its cost becomes high.

FIG. 18 is an enlarged plan view of the semiconductor chip 5 a, FIG. 19is a cross-sectional view taken along line X2-X2 of FIG. 18, FIG. 20 isa fragmentary cross-sectional view of the semiconductor chip 5 a, andFIG. 21 is a cross-sectional view taken along line Y2-Y2 of FIG. 18.

The semiconductor chip 5 a includes a semiconductor substrate 9, aplurality of transistor devices formed in a main surface (formingsurface sides of pads BP1 and BP2) of the semiconductor substrate 9, amultilayer wiring layer in which an insulating layer 10 and wiringlayers 11 a and 11 b are respectively stacked over the main surface ofthe semiconductor substrate 9 in plural stages, a surface protectivefilm (final protective film) 12 formed so as to cover the wiring layers11, etc. The semiconductor substrate 9 is formed of, for example, an n⁺type silicon (Si) monocrystal. The insulating layer 10 is constitutedof, for example, a silicon oxide (SiO₂) film. Each of the wiring layers11 a and 11 b is formed of a metal material like aluminum (Al), forexample, and corresponds to the top wiring layer here. The surfaceprotective film 12 is formed by laminating an organic film, like apolyimide film (PiQ), over the silicon oxide film, silicon nitride(Si₃N₄) film or a laminated film thereof.

The semiconductor chip 5 a has a main surface (circuit forming surface)5 ax and a back surface (back electrode forming surface) 5 ay located onsides opposite to each other. An integrated circuit and the pads BP1 andBP2 are formed on the main surface 5 ax side of the semiconductor chip 5a, and a drain electrode 13 electrically connected to a drain region DRis formed over the back surface 5 ay. The integrated circuit principallycomprises the transistor devices and wiring layers 11 a and 11 b formedin the main surface 5 ax of the semiconductor substrate 9. The drainelectrode 13 is formed by evaporating a metal, such as gold (Au), and itis connected to the die pad 7 a 2 as described above. Such openings 14as to expose parts of the wiring layers 11 a and 11 b are defined in thesurface protective film 12. The parts of the wiring layers 11 a and 11b, which are exposed from the openings 14, are configured as the padsBP1 for the source electrode of the power MOS Q1 and the pad BP2 for itsgate electrode.

Two source electrode pads BP1 are formed in a width direction of thesemiconductor chip 5 a. The respective pads BP2 are formed so as toextend along the longitudinal direction (first direction X) of thesemiconductor chip 5 a so as to be opposed to each other. The gateelectrode pad BP2 is disposed in the neighborhood of one short side ofthe semiconductor chip 5 a. The plane form of the pad BP2 is a square,for example, and its plane size is about 280 μm×280 μm, for example. Thewiring layer 11 b formed with the pad BP2 has wiring sections 11 b 1 and11 b 2 formed integrally therewith. The wiring section 11 b is a patternwhich extends along the longitudinal direction of the semiconductor chip5 a and is disposed between the two pads BP1. One wiring section 11 b 2is a pattern which extends along the outer periphery of thesemiconductor chip 5 a and is disposed so as to surround the two padsBP1. The widths of the wiring sections 11 b 1 and 11 b 2 arerespectively about 25 μm, for example. Owing to the provision of such aconfiguration, the pads BP1 can be disposed so as to approach the diepad 7 a 2 and extend along a pair of long sides. Thus, the lengths ofthe wires WA1 for electrically connecting the pads BP1 and the die pad 7a 2 can be shortened and more wires WA1 can be disposed side by side.Therefore, it is possible to reduce the parasitic inductance LsH. Oneend (end located opposite to the side connected to the pad BP2) of thesemiconductor chip 5 a is formed so as not to connect to part of eachwire 11 b 2 at the wiring section 11 b 1 for the gate electrode.Consequently, the source region SR1 of the power MOS Q1 can be formedwithout its isolation. That is, the on resistance can be reduced byforming the source region SR1 without the isolation thereof.

An epitaxial layer 14 ep formed of, for example, an n type siliconmonocrystal is formed over the main surface of the semiconductorsubstrate 9. An n⁻ type semiconductor region 15 n 1, a p typesemiconductor region 15 p 1 provided thereon, an n⁺ type semiconductorregion 15 n 2 provided thereon, and a p⁺ type semiconductor region 15 p2 which extends from the main surface of the semiconductor substrate 9so as to connect to the p type semiconductor region 15 p 1 are formed inthe epitaxial layer 14 ep. For example, an n channel vertical power MOSQ1 having a trench gate structure is formed in the semiconductorsubstrate 9 and epitaxial layer 14 ep referred to above.

The power MOS Q1 includes the n⁺ type semiconductor region 15 n 2 whichfunctions as a source region SR1, the n⁻ type semiconductor region 15 n1 which functions as a drain region DR1, the p type semiconductor region15 p which functions as a channel forming region CH1, a gate insulatingfilm 17 formed over an inner wall surface of a trench 16 dug in thethickness direction of the epitaxial layer 14 ep, and a gate electrodeG1 embedded into the trench 16 with the gate insulating film 17interposed therebetween. The gate electrode G1 is formed, for example,of a low-resistance polycrystal silicon. With the formation of such atrench gate structure, the unit area of the power MOS Q1 can be scaleddown or miniaturized and brought into high integration.

The gate electrode G1 of each cell is pulled out onto a field insulatingfilm FLD through a gate wiring GL formed of polycrystal silicon, whichis formed integrally therewith, and is electrically connected to thecorresponding wiring layer 11 b through a contact hole 18. The surfacesof the gate electrode G1 and gate wiring GL are covered with theinsulating layer (cap insulating layer) 10 and are isolated from thewring layers 11 a. Each of the wiring layers 11 a is electricallyconnected even to its corresponding p type semiconductor region 15 p 1for channel formation through the p⁺ type semiconductor region 15 p 2 inaddition to the n⁺ type semiconductor region 15 n 2 for the source. Thecurrent 11 at the operation of the power MOS Q1 flows between the sourceregion SR1 and the drain region DR1 along the depth direction of thetrench 16 (flows in the direction of thickness of a drift layer) andflows along the side surfaces of the gate insulating film 17. In such avertical power MOS Q1, its gate area per unit cell area is large and thejunction area of the gate electrode G1 and the drain's drift layer islarge, so that a parasitic capacitance between the gate and drainthereof becomes large, as compared with the horizontal field effecttransistor whose channel is formed in the direction horizontal to themain surface of the semiconductor substrate. On the other hand, thechannel width per unit cell area can be increased and the on resistancecan be reduced. Incidentally, PWL indicates a p⁻ type well.

Since a semiconductor chip 5 b formed with a power MOS Q2 for a lowsideswitch is substantially identical to the semiconductor chip 5 a indevice configuration, a description thereof is omitted. However, thethreshold voltage of the power MOS Q2 for the lowside switch iscontrolled at a value higher than the threshold voltage of the power MOSQ1 for the highside switch. This is a configuration for suppressing theoccurrence of a phenomenon (self turn-on) in which, when the switch ischanged over from the power MOS Q1 for the highside switch to the powerMOS Q2 for the lowside switch, a current (through current) flows fromthe terminal ET1 to the terminal ET4. Since a path for the throughcurrent can be restrained or cut off owing to the above configuration,the self turn-on phenomenon can be inhibited or prevented.

A semiconductor chip 5 c formed with control driver circuits 3 a and 3 bwill be explained next. The circuit configuration and the devicesectional configuration of the semiconductor chip 5 c are identical tothose shown in FIGS. 5 and 6. A basic configurational example of thedriver 3 a is shown in FIG. 22. Incidentally, since the driver circuit 3b is substantially identical to the driver circuit 3 a in deviceconfiguration, the driver circuit 3 a will be explained and thedescription of the driver circuit 3 b will be omitted.

The driver circuit 3 a has a power MOS Q3 of a p channel horizontal type(corresponding to such a type that its channel is formed in thedirection horizontal to a main surface of a semiconductor substrate SUB)formed in an n type well NWL1 and an n channel horizontal type power MOSQ4 formed in a p type well PWL1. The power MOS Q3 includes a sourceregion SR3, a drain region DR3, a gate insulating film 20 p, and a gateelectrode G3. Each of the source region SR3 and the drain region DR3 hasa p⁻ type semiconductor region 21 a and a p⁺ type semiconductor region21 b. The power MOS Q4 includes a source region SR4, a drain region DR4,a gate insulting film 20 n, and a gate region G4. Each of the sourceregion SR4 and the drain region DR4 has an n⁻ type semiconductor region22 a and an n⁺ type semiconductor region 22 b. Further, the drainregions DR3 and DR4 are connected to an output terminal ET7 and areelectrically connected to the gate of the power MOS Q1 for the highsideswitch through the output terminal ET7. The source region SR4 isconnected to a terminal ET8 and is electrically connected to the sourceof the power MOS Q1 for the highside switch through the terminal ET8.

A semiconductor chip 5 d formed with a Schottky barrier diode D1 will beexplained next. FIG. 23 shows a fragmentary cross-sectional view of thesemiconductor chip 5 d. The left side of FIG. 23 indicates a deviceregion DR, and the right side thereof indicates a peripheral region PR.A semiconductor substrate 23 is formed of, for example, an n⁺ typesilicon monocrystal. An epitaxial layer 24 formed of, for example, an ntype silicon monocrystal is formed over a main surface of thesemiconductor substrate 23. Further, a wiring layer 25 is formed over amain surface of the epitaxial layer 24 so as to make contact with it.The wiring layer 25 has a structure formed by stacking a barrier metallayer 25 a like, for example, tungsten titanium (TiW) or the like, and ametal layer 25 b like, for example, aluminum (Al) or the like, in thisorder from the lower layer. The Schottky barrier diode D1 is formed at aportion where the barrier metal layer 25 a and the epitaxial layer 24contact each other in the device region DR. A field insulating film FLDis formed in the peripheral region PR at the outer periphery of thedevice region DR. A p type well PWL2 is formed in a layer, below an endon the device region DR side, of the field insulating film FLD. Aninsulating film 26 like, for example, PGS (Phospho Silicate Glass) orthe like is deposited over the field insulating film FLD. The wiringlayer 25 is covered by a surface protective film 27. The surfaceprotective film 27 is identical to the surface protective film 12 inconstruction. An opening 28 is formed at part of the surface protectivefilm 27, and, hence, part of the wiring layer 25 is exposed. The exposedportion of the wiring layer 25 serves as the pad BP9. On the other hand,a cathode electrode 29 is formed over a back surface of thesemiconductor substrate 23, which is placed on the side opposite to themain surface of the semiconductor substrate 23. The cathode electrode 29is formed by adhering, for example, gold (Au) or the like by means of avapor deposition method or the like.

FIG. 24 is a plan view showing one example of the state of packaging ofthe package 6, and FIG. 25 is a side view of the package 6 shown in FIG.24. Incidentally, FIG. 24 shows the package 6 as seen therethrough tounderstand the manner of wiring the wiring board 30.

The wiring board 30 is formed of, for example, a printed wiring board.Packages 6, 31 and 32 and chip parts 33 and 34 are mounted over a mainsurface of the wiring board 30. The control circuit 2 is formed in thepackage 31, and the load circuit 4 is formed in the package 32. The coilL1 is formed in the chip part 33, and the capacitor C1 is formed in eachchip part 34. Leads 31 a of the package 31 are electrically connected totheir corresponding leads 7 b (7 b 4) of the package 6 through wirings30 a of the wiring board 30. Leads 7 b 1 of the package 6 areelectrically connected to a wiring 30 b of the wiring board 30. Outputleads (output terminals) 7 b 3 of the package 6 are electricallyconnected to one end of the coil L1 of the chip part 33 through a wiring(output wiring) 30 c of the wiring board 30. The other end of the coilL1 of the chip part 33 is electrically connected to the load circuit 4through a wiring (output wiring) 30 d of the wiring board 30. Leads 7 b2 for a reference potential GND of the package 6 are electricallyconnected to one end of the capacitors C1 of the plural chip parts 34through a wiring 30 e of the wiring board 30. The other end of thecapacitors C1 of the chip parts 34 is electrically connected to the loadcircuit 4 through the wiring 30 d of the wiring board 30.

FIG. 26 shows one example of a circuit system configuration of thenon-insulated DC-DC converter 1, including the package 6 according tothe first embodiment. In the present circuit system, a plurality ofpackages 6 are connected in parallel with one load circuit 4. An inputpower supply potential Vin, a reference potential GND and a controlcircuit 2 are shared among the plural packages 6. In this type ofcircuit system, the miniaturization of the overall system is impairedassuming that a configuration (see FIG. 4) is adopted in which powerMOSs Q1 and Q2, driver circuits 3 a and 3 b and a Schottky barrier diodeD1 are respectively separately packaged. On the other hand, since thepower MOSs Q1 and Q2, driver circuits 3 a and 3 b and Schottky barrierdiode D1 are accommodated in the same package 6 in the present firstembodiment, the overall system can be rendered small-sized.

A method for assembling the package 6 according to the first embodimentwill be explained next with reference to the assembly flow diagram ofFIG. 27.

Four types of semiconductor wafers and a dicing tape are first prepared(Steps 100 a and 100 b). A plurality of semiconductor chips 5 a through5 d are respectively formed over main surfaces of the four types ofsemiconductor wafers. Subsequently, the dicing tape is bonded onto backsurfaces of the semiconductor wafers, and the semiconductor chips 5 athrough 5 d are respectively cut out from the respective semiconductorwafers by a dicing blade (Steps 101 and 102).

Next, a lead frame and die bond paste are prepared (Steps 103 a and 103b). FIGS. 28 and 29 respectively show one example of a fragmentary planview illustrative of each unit area of a lead frame 7. FIG. 28 shows amain surface of the lead frame 7, and FIG. 29 shows a back surface ofthe lead frame 7. The lead frame 7 includes two frame body sections 7 f1 that extend along the right and left directions of FIG. 28, frame bodysections 7 f 2 that extend in the direction orthogonal to the frame bodysections 7 f 1 so as to act as an intermediary between the two framebody sections 7 f 1, a plurality of leads 7 b that extend from the innerperipheries of the frame body sections 7 f 1 and 7 f 2 to the center ofthe unit area, and three die pads 7 a 1 through 7 a 3 and an L-shapedwiring section 7 c formed integrally with the plural leads 7 b andsupported by the frame body sections 7 f 1 and 7 f 2 through the leads 7b. Half etching areas are formed over the outer peripheries on the backsurface sides, of the leads 7 b and die pads 7 a 1 through 7 a 3, andthey are made thin as compared with the other sections. Incidentally,the half etching areas are diagonally hatched to make it easy to seethem in the drawing in FIG. 29. As the die bond paste, for example,silver (Ag) paste is used.

Subsequently, the semiconductor chips 5 a through 5 d are mounted overthe main surfaces of the die pads 7 a 1 through 7 a 3 of the respectiveunit areas of the lead frame 7 through the die bond paste interposedtherebetween. Thereafter, annealing or heat treatment is effected tocure the die bond paste. Thus, as shown in Step S1 of FIG. 30, thesemiconductor chips 5 a through 5 d are adhered onto the die pads 7 a 1through 7 a 3 (Steps 104 and 105). By mounting the small semiconductorchips 5 d, 5 c, 5 a and 5 b in that order, an improvement inproductivity can also be achieved.

Next, two types of wires WA1 through WA3 and WB1 through WB6 areprepared (Steps 106 a and 106 b). While any of the wires WA1 through WA3and WB1 through WB6 are being formed, for example, of gold (Au), thewires WA1 through WA3 are heavy wires that are 5011m thick, for example,and the wires WB1 through WB6 are thin wires that are 30 μm thick, forexample. Subsequently, the two types of wires WA1 through WA3 and WB1through WB6 are bonded by an ultrasonic thermocompression method (Step106). There is now a fear that, since the bonding processing of thethick wires WA1 through WA3 needs a load larger than that at the bondingprocessing of the thin wires WB1 through WB6, the thin wires WB1 throughWB6 may be broken or disconnected due to the large load at the time ofbonding of the thick wires, when the thick wires WA1 through WA3 arebonded after the thin wires WB1 through WB6 are first bonded. Accordingto the discussions of the present inventors in particular, thewire-broken failures easily occur where the die pads 7 a 1 through 7 a 3are in isolation. Consequently, in the wire bonding process of thepresent embodiment, the thick wires WA1 through WA3 are bonded, and,thereafter, the thin wires WB1 through WB6 are bonded, as indicated atSteps S2 and S3 of FIG. 30. It is thus possible to restrain or preventbreaks and failures in the thin wires WB1 through WB6.

Next, a sealing or encapsulating resin and a sealing tape are prepared(Steps 107 a and 107 b). Subsequently, a resin sealing (mold) processstep is performed by a transfer mold method (Step 108). The transfermolding method is a method for using a shaping die (mold die) providedwith a pot, a runner, a resin injection gate and a cavity and the likeand injecting a thermosetting resin into the cavity from the pot via therunner and the resin injection gate to thereby form a resin molded bodyMB. Upon fabrication of a QFN type package 6, there have been adopted anindividual type transfer mold method using a multicavity lead framehaving a plurality of product forming areas (device forming areas andproduct acquiring areas) and resin molding or sealing semiconductorchips mounted to the product forming areas every product forming areas,and a batch type transfer mold method for collectively resin moldingsemiconductor chips mounted to respective product forming areas. Thepresent embodiment adopts, for example, the individual type transfermold method.

The resin sealing process is performed as follows, for example. Thesealing tape is first placed over a mold lower die of a resin-moldeddie. Thereafter, the lead frame 7 is disposed over the sealing tape, andthe resin-molded die is clamped in such a manner that the back surfacesof both some of the plural leads 7 b and the die pads 7 a 1 through 7 a3 adhere to the sealing tape. The reason why the sealing tape is bondedonto the back surface of the lead frame 7 prior to the resin sealingprocess, is as follows: In the process of resin sealing, when dealingwith a construction in which the plural die pads 7 a 1 through 7 a 3 arecontained in one package 6, as in the present embodiment, the resin willeasily leak at a portion Z where slits for forming the boundary amongthe three die pads 7 a 1 through 7 a 3 shown in FIG. 28 intersect, andthe resin (resin burrs) that has barged or intruded into the backsurfaces (packaging or mounting surface at the time that the package 6is packaged on the wiring board) of the die pads 7 a 1 through 7 a 3through the intersecting point Z interferes with the packaging ormounting of the package 6, to thereby incur a failure in the packaging.Therefore, the bonding of the sealing tape is done to prevent theoccurrence of such a state. In the present embodiment, the sealing tapeis securely bonded onto the back surfaces (containing the slits forforming the boundary among the three die pads) of the three die padsprior to the sealing process in order to avoid the above leakage ofresin and to thereby prevent the sealing resin from leaking to the backsurfaces of the die pads 7 a 1 through 7 a 3 out of the intersectingpoint Z or the like. Thus, the failure in the mounting of the package 6due to the resin burring can be prevented. Since it is preferable tosecurely bond the sealing tape onto the die pads 7 a 1 through 7 a 3 andthe like during the sealing process as described above, the sealing tapemay preferably be one capable of obtaining a high viscosity strengthgreater than or equal to, for example, 0.5 N as the strength of adhesionof the sealing tape from such a viewpoint. On the other hand, in thelead frame 7, for example, nickel (Ni)/palladium (Pd)/gold (Au) flashplating has been used in recent years. This is because the Pd(palladium)-plated lead frame 7 has the advantage that the use oflead-free solder can be realized upon packaging of the package 6 on thewiring board, and it is easy on the environment, and, further, it hasthe advantage that, although a general lead frame requires theapplication of silver (Ag) paste onto a wire bonding section of the leadframe in advance for the purpose of wire bonding, wires can be connectedeven though such Ag paste is not applied thereto. On the other hand,since a problem concerning the above-described packaging failure due tothe resin burrs arises even in the case of the Pd-plated lead frame 7,the resin burrs are removed by a cleaning process or the like where theresin burrs are formed. However, a problem arises in that, since thelead frame 7 is subjected to plating prior to the resin sealing processto eliminate a manufacturing process in the case of the Pd-plated leadframe 7, the Pd-plated film that has been plated in advance is alsopeeled off when an attempt is made to peel away the resin burrs by meansof the subsequent cleaning process or the like. That is, there is aprobability that the Pd-plated lead frame 7 cannot be used. On the otherhand, since the formation of the resin burrs can be prevented, asdescribed above, and a strong cleaning process subsequent to the sealingprocess is unnecessary in the present embodiment, the Pd-plated leadframe 7 having the above-mentioned satisfactory advantages can be used.

Subsequently, the sealing resin is injected into a mold upper die(cavity). Semiconductor chips 5 a through 5 c and a plurality of wiresWA1 through WA3 and WB1 through WB6 are resin-sealed such that some ofthe die pads 7 a 1 through 7 a 3 and some of the plural leads 7 b areexposed from a resin molded body MB (sealing member), thereby to formthe corresponding resin molded body MB. In the present embodiment, thehalf etching areas are formed at the peripheral portions of the backsurfaces of the die pads 7 a 1 through 7 a 3 and leads 7 b, as describedabove. Forming the half etching areas (diagonally-hatched areas) in thisway makes it possible to strengthen the adhesive forces among the diepads 7 a 1 through 7 a 3 and the leads 7 b and the resin molded body MB.That is, a lead escape can be restrained or prevented. The thickness ofthe lead frame has also been made thin in response to a demand forreduction in the thickness and weight of a semiconductor device inparticular. In addition to it, the leads 7 b are thin as compared withother portions, and their tips are in a floating state without beingconnected to other portions. Therefore, the lead portions might bedeformed or peeled off where the resin sealing or molding is donewithout executing any means. Thus, the outer peripheral portions, on thetip sides of the leads 7 b, of the back surfaces thereof are alsohalf-etched to form steps on the outer peripheries of the back surfacesof the leads 7 b. Consequently, the sealing resin flows into theirhalf-etched portions during the sealing process to cover the half-etchedportions and press and hold the outer peripheral portions on the tipsides of the leads 7 b. It is therefore possible to restrain or preventdeformation and peeling off of the leads 7 b.

After the above-described resin sealing process, the injected sealingresin is cured (resin cure step 108). After execution of a mark step109, individual product parts are divided from the lead frame 7 (Step110).

Second Preferred Embodiment

FIG. 31 is a plan view showing an example of a package 6 according to asecond embodiment, FIG. 32 is a plan view showing an example of thepackage 6 except for metal plate wirings of FIG. 31, FIG. 33 is across-sectional view taken along line Y3-Y3 of FIG. 31, and FIG. 34 is across-sectional view taken along line X3-X3 of FIG. 31. Incidentally,FIGS. 31 and 32 also show a sealing member MB as seen therethrough tomake it easy to see the elements in the drawings. Further, die pads 7 a1 and 7 a 2, leads 7 b and a wiring section 7 c are given hatching.

In the second embodiment, some of wirings for electrically connectingpads and respective portions are configured as metal plate wirings 36 inplace of wires. That is, pads BP1 for a source electrode of a power MOSQ1 of a semiconductor chip 5 a are electrically connected to a die pad 7a 2 through one metal plate wiring 36. A BP5 for a source electrode of apower MOS Q2 of a semiconductor chip 5 b is electrically connected toleads 7 b 2 (7 b) through one metal plate wiring 36. The metal platewirings 36 are formed of a metal such as, for example, copper (Cu) oraluminum (Al) or the like, and they are electrically connected to thepads BP1 and BP5 and leads 7 b through bump electrodes 37. Each of thebump electrodes 37 is formed of a metal such as, for example, lead(Pb)/tin (Sn) or gold (Au) or the like. A conductive resin may be usedin place of the bump electrodes 37. Each of the metal plate wirings 36is also covered with the resin molded body MB over its entirety.

Thus, according to the second embodiment, the parasitic inductance oneach wiring path can be further reduced owing to the use of the metalplate wirings 36 in place of the wires. Therefore, the switching losscan be further reduced and the voltage conversion efficiency of thenon-insulated DC-DC converter 1 can be further enhanced as compared withthe first embodiment.

Since an anode electrode of a Schottky barrier diode D1 is electricallyconnected to a reference potential GND by the corresponding metal platewiring 36, which is large in area, the wiring resistance on the anodeside and the parasitic inductance La on the anode electrode side can begreatly reduced. Accordingly, the effect of the Schottky barrier diodeD1 can be sufficiently exhibited as compared with the first embodiment.Further, the diode conduction loss, and the diode recovery loss due to areverse recovery time (trr) being made fast can be reduced. Therefore,it is possible to further enhance the voltage conversion efficiency ofthe non-insulated DC-DC converter 1. Since the inductances Lk and La canbe made low, the noise can be further reduced.

When attention is now paid only to the parasitic inductances on thewiring paths, the wires WB1 through WB6 for electrically connecting aplurality of pads BP3, BP4, BP7, BP8, BP10, and BP11 of the drivercircuits 3 a and 3 b and respective portions may preferably be formed ofmetal plate wirings 36. However, openings for the plural pads BP3, BP4,BP7, BP8, BP10 and BP11 of the driver circuits 3 a and 3 b are narrow,such as, for example, 90 μm. If the metal plate wirings 36 are connectedin place of the wires WB1 through WB6, then ones narrow in width shouldinevitably be used even in the case of the metal plate wirings 36. Thus,it is expected that a sufficient effect cannot be obtained in terms ofthe reduction in parasitic inductance even as compared with the wires.It is also difficult to fabricate a metal plate wiring 36 of 100 μm orless, for example. Further, the connection of each metal plate wiringalso becomes difficult as compared with the wires. Therefore, there is afear of an increase in product cost and degradation of the productyield. Thus, the second embodiment adopts such a construction that theplurality of pads BP3, BP4, BP7, BP8, BP10 and BP11 of the drivercircuits 3 a and 3 b and the respective portions are respectivelyconnected by the wires WB1 through WB6.

However, in the wiring paths for connecting the power MOSs Q1 and Q2 anddriver circuits 3 a and 3 b as described above, a plurality of the wiresWB1 and WB2 are connected side by side to reduce the parasiticinductances on the wiring paths. That is, since a wide metal platewiring 36 of 200 μm wide, for example, can be used at such a portion,the metal plate wiring 36 can be used as an alternative to the wires WB1and WB2. Since the parasitic inductances can be reduced by providingelectric connection between both the power MOSs Q1 and Q2 and the drivercircuits 3 a and 3 b by means of the metal plate wiring 36 in this way,the switching loss can be reduced.

Third Preferred Embodiment

FIG. 35 is a plan view showing a top surface of a package 6 according toa third embodiment, and FIGS. 36 and 37 are, respectively,cross-sectional views taken along line Y4-Y4 of FIG. 35 and line X4-X4thereof. Incidentally, the arrangement of the inside of the package 6 isidentical to that shown in FIG. 31. In FIG. 35, the top surface of thepackage 6 is given hatching to make it easy to see in the drawing. Thetop surface of the package 6 corresponds to a surface lying on the sideopposite to a mounting surface (surface opposite to a wiring board) ofthe package 6.

In the third embodiment, the pads and respective portions are connectedby metal plate wirings 36 in a manner similar to the second embodiment.However, some of the metal plate wirings 36 are exposed from a resinmolded body MB. The metal plate wirings 36 are disposed so as to coverregions for forming power MOSs Q1 and Q2 corresponding to heatgeneration sources of semiconductor chips 5 a and 5 b. The presentembodiment illustrates, as an example, a case in which both of the metalplate wirings 36 that cover the semiconductor chips 5 a and 5 b areexposed from the top surface of the package 6. However, a configurationin which only the metal plate wiring 36 on the semiconductor chip 5 bside formed with the power MOS Q2 for the lowside switch, whichgenerates a relatively high amount of heat, is exposed, may be adopted.A further improvement in radiation can also be obtained by placing aradiating fin over the top surface of the package 6 and bonding it ontothe exposed surface of each metal plate wiring 36.

According to the third embodiment, each metal plate wiring 36 is causedto have a radiating function in addition to the advantages obtained inthe first and second embodiments. Thus, since there is no need to addother parts for radiation, the process of assembling the package 6 canbe reduced as compared with the case in which the radiating parts areadded, and the time required to assemble the package 6 can be shortened.Since the number of parts can be reduced, the cost of a semiconductordevice can be lowered.

Fourth Preferred Embodiment

As another problem that is caused due to an increase in current of aDC-DC converter and an increase in its frequency, a problem concerningthe heat during its operation arises. Since the semiconductor chips 5 aand 5 b are constructed so as to be accommodated in one package 6 in thefirst through third embodiments, high radiation is required. The fourthembodiment will provide a construction in which such heat radiation hasbeen taken into consideration.

FIG. 38 is a cross-sectional view showing a package 6 according to afourth embodiment. In the present embodiment, leads 7 b are reverselymolded in comparison to the leads 7 b employed in the first throughthird embodiments. In the present structure, the back surfaces(corresponding to surfaces on the sides opposite to surfaces over whichsemiconductor chips 5 a and 5 b are mounted) of the die pads 7 a 1 and 7a 2 are exposed to the top surface of the package 6. The back surfaces(corresponding to junction surfaces bonded to terminals of a wiringboard) of the leads 7 b are exposed to a mounting surface of the package6.

FIG. 39 is a cross-sectional view showing one example illustrative of astate in which the package 6 of FIG. 38 is mounted over a wiring board30. Leads 7 b located over the back surface (mounting surface) of thepackage 6 are bonded to corresponding terminals of the wiring board 30through an adhesive 38 such as, for example, lead/tin solder or the likethat is interposed therebetween. A radiating fin (heat sink) 40 isbonded onto the top surface of the package 6, i.e., the back surfaces ofthe die pads 7 a 1 and 7 a 2 through an insulating sheet 39 having ahigh thermal conductivity, such as, for example, silicone rubber or thelike. In the present construction, heat generated in the semiconductorchips 5 a and 5 b is transferred via the die pads 7 a 1 and 7 a 2 fromthe back surfaces of the semiconductor chips 5 a and 5 b to theradiating fin 40, from which the heat is radiated. Thus, even though anon-insulated DC-DC converter 1 is brought into large-current andhigh-frequency states in such a construction in which the twosemiconductor chips 5 a and 5 b are contained in one package 6, a highheat radiation can be obtained. Although an air-cooled heat sink hasbeen illustrated by way of example in the present embodiment, forexample, a liquid-cooled heat sink may be used which has a flow path toallow cooled flowing or running water to flow into a radiating body.

Fifth Preferred Embodiment

FIG. 40 is a plan view showing one example of a configuration of apackage 6 according to a fifth embodiment, and FIG. 41 is across-sectional view taken along line X5-X5 of FIG. 40. Incidentally,FIG. 40 shows a sealing member MB as seen therethrough to make it easyto see this element in the drawing even in the fifth embodiment.Further, die pads 7 a 1 and 7 a 2, leads 7 b and wiring sections 7 c aregiven hatching. A cross-section taken along line Y5-Y5 of FIG. 40 isidentical to FIG. 16.

In the fifth embodiment, a semiconductor chip 5 b formed with a powerMOS Q2 is disposed so as to approach one group (terminal ET5 side) ofoutput leads 7 b 3 rather than a semiconductor chip 5 d formed with aSchottky barrier diode D1. The wiring sections 7 c that contribute tothe supply of a reference potential GND are divided into wiring sections7 c 1 and 7 c 2. A pad BP9 for an anode electrode of the Schottkybarrier diode D1 is electrically connected to the wiring section 7 c 1through a plurality of wires WA3, whereas a pad BP5 a for a sourceelectrode of the power MOS Q2 is electrically connected to the wiringsection 7 c 2 through a plurality of wires WA2. That is, in the presentembodiment, the reference potential GND is separated into a referencepotential GND for the semiconductor chip 5 d and a reference potentialGND for the semiconductor chip 5 b.

Thus, a thermal resistance measurement (inspecting process) for thepackage 6 and its sorting can be easily performed. The thermalresistance measurement is a measuring method for determining, using therelation that a forward voltage Vf has a temperature dependence, whetherelectrical connections of the semiconductor chips 5 b and 5 d andrespective portions are good or bad. When the reference potential GNDfor the Schottky barrier diode D1 and the reference potential GND forthe power MOS Q2 are brought together upon the measurement, the forwardvoltage Vf on the Schottky barrier diode D1 side and the forward voltageVf on the power MOS Q2 side are measured together. However, since theforward voltage Vf of the Schottky barrier diode D1 is normally low, theforward voltage Vf on the Schottky barrier diode D1 side comes intoconsideration, and, hence, the forward voltage Vf on the power MOS Q2side cannot be sufficiently measured. Therefore, there is a fear thateven though a problem occurs in connectivity on the power MOS Q2 side,it becomes unobvious at the time of measurement. Thus, in the presentembodiment, the reference voltages GND are separately provided betweenthe Schottky barrier diode D1 and the power MOS Q2 inside the package 6.Consequently, the forward voltages Vf for the Schottky barrier diode D1and the power MOS Q2 can be measured separately, thereby making itpossible to facilitate their measurements. Since the accuracy ofmeasurement can be improved, the reliability of the inspecting processcan be enhanced. Thus, it is possible to enhance the reliability of thepackage 6.

Sixth Preferred Embodiment

FIG. 42 is a plan view showing an example of a package 6 according to asixth embodiment, FIG. 43 is a plan view showing an example of thepackage 6 except for the metal plate wirings and wires of FIG. 42, FIG.44 is a cross-sectional view taken along line Y6-Y6 of FIG. 42, and FIG.45 is a cross-sectional view taken along line X6-X6 of FIG. 42.Incidentally, FIGS. 42 and 43 also show a sealing member MB as seentherethrough to make it easy to see other elements in the drawings.Further, die pads 7 a 1 and 7 a 2, leads 7 b and wiring sections 7 c aregiven hatching.

The sixth embodiment will be explained in connection with one example inwhich the constructions of the second and fifth embodiments arecombined. That is, one example will be explained in which, in theconstruction of the fifth embodiment, some wires are replaced with metalplate wirings 36. Pads BP1 for a source electrode of a power MOS Q1 of asemiconductor chip 5 a are electrically connected to a die pad 7 a 2through one metal plate wiring 36. A pad BP5 for a source electrode of apower MOS Q2 of a semiconductor chip 5 b is electrically connected to awiring section 7 c 2 through one metal plate wiring 36 and iselectrically connected to its corresponding leads 7 b 2 (7 b) throughthe wiring section 7 c 2. Further, a pad BP9 for an anode electrode of aSchottky barrier diode D1 of a semiconductor chip 5 d is electricallyconnected to a wiring section 7 c 1 through one metal plate wiring 36and is electrically connected to its corresponding leads 7 b 2 (7 b)through the wiring section 7 c 1.

According to such a sixth embodiment, an advantageous effect similar tothe second and fifth embodiments can be obtained.

Seventh Preferred Embodiment

A seventh embodiment will explained in connection with an example inwhich countermeasures are taken against the second problem describedwith reference to the first embodiment. FIG. 46 is a diagram showing anexample of a non-insulated DC-DC converter 1 according to the seventhembodiment. In the present embodiment, a Schottky barrier diode (secondSchottky barrier diode) D2 is electrically connected between a gateelectrode (the output of a driver circuit 3 a) of a power MOS Q1 for ahighside switch and a reference potential GND. The anode electrode ofthe Schottky barrier diode D2 is electrically connected to the referencepotential GND, whereas its cathode electrode is electrically connectedto the gate electrode (the output of the driver circuit 3 a) of thepower MOS Q1 for the highside switch. A semiconductor chip 5 e formedwith the Schottky barrier diode D2 is accommodated in a package 6together with other semiconductor chips 5 a through 5 d.

FIGS. 47 and 48 are, respectively, diagrams showing the operating statesof a parasitic device of a semiconductor chip 5 c according to theconfiguration of the package 6 shown in FIG. 46. FIG. 47 shows a stateof the parasitic device at a transient state when a power MOS Q3 of thedriver circuit 3 a is off and a power MOS Q4 thereof is on, and FIG. 48shows a state of the parasitic device at a steady state when the powerMOS Q3 is off and the power MOS Q4 is on.

A load current is supplied via a Schottky barrier diode D1 during thedead times of both power MOSs Q1 and Q2, as described above. However, inthe case of a heavy load, when the load current that flows through theSchottky barrier diode D1 due to the wiring inductances Lk and Labecomes small, as described above, and the load current flows even intoa parasitic diode (body diode) Dp of a power MOS Q2 for a lowsideswitch, the potential at a terminal ET5 (VSWH) on the output side of thenon-insulated DC-DC converter 1 is reduced to a negative potential by aforward voltage Vf of the parasitic diode Dp. If any measure is taken,then the output of the semiconductor chip 5 c (driver chip or controlIC) electrically connected to the power MOS Q1 is also reduced to anegative potential. As a result, a problem arises in that the parasiticnpn type bipolar transistor Qp is turned on within the semiconductorchip 5 c so that the current consumption of the driver chip increases.On the other hand, although the terminal ET5 (VSWH) is reduced to thenegative potential, as described above, in the seventh embodiment, theSchottky barrier diode D2 having a forward voltage Vf of about 0.3V, forexample, is electrically connected between the gate electrode of thepower MOS Q1 for the highside switch and the reference potential GND, asdescribed above, thereby making it possible to raise the potential atthe gate (GH) of the power MOS Q1 for the highside switch to about−0.3V. Therefore, it is possible to prevent the parasitic bipolartransistor Qp lying within the semiconductor chip 5 c from being turnedon. Therefore, an increase in current consumption of the semiconductorchip 5 c can be suppressed, and a loss consumed by the semiconductorchip 5 c can be reduced. Since it is possible to avoid pulling out of anelectrical charge from a terminal ET6 (BOOT), the automatic stopping(malfunction) of the power MOS Q1 for the highside switch due to aprotection circuit function can be prevented.

FIG. 49 is a plan view showing a specific example of the package 6according to the seventh embodiment, and FIG. 50 is a cross-sectionalview taken along line Y7-Y7 of FIG. 49. Incidentally, FIG. 49 also showsa sealing member MB as seen therethrough to make it easy to see otherelements in the drawing. Further, die pads 7 a 1 and 7 a 2, leads 7 band a wiring section 7 c are given hatching. A cross-section taken alongline Y1-Y1 of FIG. 49 is identical to FIG. 16, and a cross-section takenalong line X1-X1 of FIG. 49 is identical to FIG. 17. Wires are omittedfrom FIG. 50 to make it easy to see other elements in the drawing.

A semiconductor chip 5 e formed with a Schottky barrier diode D2 ismounted over a die pad 7 a 4 (fourth chip mounting section). A backsurface of the semiconductor chip 5 e serves as a cathode electrode andis electrically connected to the die pad 7 a 4. The die pad 7 a 4 iselectrically connected to a pad BP2 of a semiconductor chip 5 a formedwith a power MOS Q1 through a wire WA4. That is, a cathode electrode ofthe Schottky barrier diode D2 is electrically connected to itscorresponding gate electrode of the power MOS Q1. On the other hand, apad BP12 for an anode electrode is formed over a main surface of thesemiconductor chip 5 e. The pad BP12 is electrically connected to itscorresponding die pad 7 a 3 through a wire WA5. The die pad 7 a 3 issupplied with a reference potential GND. That is, the anode electrode ofthe Schottky barrier diode D2 is electrically connected to the referencepotential GND. Thus, the use of the Schottky barrier diode D2 makes itpossible to obtain a necessary forward voltage Vf in a small area. Whilethe Schottky barrier diode D2 is capable of obtaining an advantageouseffect similar to the effect described above even if mounted outside thepackage 6, parasitic inductances on the anode and cathode of theSchottky barrier diode D2 can be reduced owing to the storage of theSchottky barrier diode D2 in the package 6. Therefore, it is possible toenhance the effect of inserting the Schottky barrier diode D2 therein.

Eighth Preferred Embodiment

FIG. 51 is a plan view showing an example of a package 6 according to aneighth embodiment, and FIG. 52 is a cross-sectional view taken alongline Y8-Y8 of FIG. 51. Incidentally, FIG. 51 also shows a sealing memberMB as seen therethrough to make it easy to see in the drawing. Further,die pads 7 a 1 and 7 a 2, leads 7 b and a wiring section 7 c are givenhatching. A cross-section taken along line Y1-Y1 of FIG. 51 is identicalto FIG. 16, and a cross-section taken along line X1-X1 of FIG. 51 isidentical to FIG. 17. Even in FIG. 51, wires are omitted therefrom tomake it easy to see other elements in the drawing.

In the eighth embodiment, a semiconductor chip 5 e is mounted over a diepad 7 a 3. That is, a pad BP12 for an anode electrode of a main surfaceof the semiconductor chip 5 e is electrically connected to the die pad 7a 3 through a bump electrode 37. Thus, the anode of a Schottky barrierdiode D2 is electrically connected to a reference potential GND throughthe die pad 7 a 3. On the other hand, the cathode electrode 29 lyingover a back surface of the semiconductor chip 5 e is electricallyconnected to its corresponding pad BP1 of a semiconductor chip 5 athrough a wire WA4. Thus, the cathode electrode of the Schottky barrierdiode D2 is electrically connected to its corresponding gate electrodeof a power MOS Q1 through the wire WA4.

According to the eighth embodiment, the following advantageous effectsare obtained in addition to the advantageous effect obtained in theseventh embodiment. That is, since the Schottky barrier diode D2 can beplaced close to the semiconductor chips 5 a and 5 c, as compared withthe seventh embodiment, parasitic inductances on the anode and cathodesides of the Schottky barrier diode D2 can be reduced. Particularlysince the anode electrode of the Schottky barrier diode D2 iselectrically connected to the reference potential GND through the diepad 7 a 3, which is large in area, the parasitic inductance on the anodeside of the Schottky barrier diode D2 can be reduced. Accordingly, theeffect of inserting the Schottky barrier diode D2 can be furtherenhanced.

Ninth Preferred Embodiment

FIG. 53 is a plan view showing an example of a package 6 according to aninth embodiment, and FIG. 54 is a cross-sectional view taken along lineY9-Y9 of FIG. 53. Incidentally, FIG. 53 also shows a sealing member MBas seen therethrough to make it easy to see in the drawing. Further, diepads 7 a 1 and 7 a 2, leads 7 b and a wiring section 7 c are givenhatching. A cross-section taken along line Y1-Y1 of FIG. 53 is identicalto FIG. 16, and a cross-section taken along line X1-X1 of FIG. 53 isidentical to FIG. 17. Even in FIG. 54, wires are omitted therefrom tomake it easy to see other elements in the drawing.

In the ninth embodiment, a semiconductor chip 5 e is mounted over a padBP1 of a semiconductor chip 5 a. That is, a cathode electrode lying overa back surface of the semiconductor chip 5 e is electrically connectedto its corresponding pad BP1 of the semiconductor chip 5 a in a statewhere it is in direct contact with the pad BP1. Thus, the cathodeelectrode of a Schottky barrier diode D2 is electrically connected toit's the corresponding gate electrode of a power MOS Q1. On the otherhand, a pad BP12 for an anode electrode lying over a main surface of thesemiconductor chip 5 e is electrically connected to a die pad 7 a 3through a wire WA5. Thus, the anode of the Schottky barrier diode D2 iselectrically connected to a reference potential GND through the die pad7 a 3.

According to the ninth embodiment, the following advantageous effectsare obtained in addition to the advantageous effects obtained in theseventh and eighth embodiments. That is, since the semiconductor chip 5e can be positional close to the semiconductor chips 5 a and 5 c ascompared with the eighth embodiment, the parasitic inductances on theanode and cathode sides of the Schottky barrier diode D2 can be greatlyreduced. Particularly, since the cathode electrode 29 of the Schottkybarrier diode D2 is directly connected to the pad BP1 of thesemiconductor chip 5 a, the parasitic inductance on the cathode side ofthe Schottky barrier diode D2 can be further reduced. Accordingly, theeffect of inserting the Schottky barrier diode D2 can be furtherenhanced. Since there is no need to change the design of each patternfor a lead frame 7 even though the Schottky barrier diode D2 isinserted, the fabrication of a semiconductor device can be facilitatedand product cost also can be reduced. Further, since the semiconductorchips are divided into the semiconductor chip 5 a formed with theSchottky barrier diode D2 and the semiconductor chip 5 a formed with thepower MOS Q1, their device characteristics can be sufficiently broughtout.

While the invention made by the present inventors has been describedspecifically on the basis of the preferred embodiments thereof, thepresent invention is not limited to the embodiments referred to above.It is needless to say that various changes can be made thereto within ascope not departing from the gist thereof.

Although the embodiments respectively have been illustrated by way ofexample with reference to a flat package structure, for example, thepresent invention is not limited to it. For example, a BGA (Ball GridArray) package structure may be adopted.

While the above description has principally been directed to a case inwhich the invention made by the present inventors is applied to a powersupply circuit for driving a CPU and a DSP, which belongs to the generalfield of application of the invention, the present invention is notlimited to it, but is applicable in various ways. The present inventioncan be applied even to a power supply circuit for driving othercircuits, for example.

The present invention can be applied to the manufacturing industry of asemiconductor device.

1. A semiconductor device comprising: a first chip mounting section, asecond chip mounting section and a third chip mounting sectionrespectively disposed at intervals; a plurality of external terminalsdisposed around the first, second and third chip mounting sections; afirst semiconductor chip disposed over the first chip mounting sectionand having a first field effect transistor; a second semiconductor chipdisposed over the second chip mounting section and having a second fieldeffect transistor; a third semiconductor chip disposed over the thirdchip mounting section and including a control circuit which controlsoperations of the first and second field effect transistors; a fourthsemiconductor chip disposed over the second chip mounting section andhaving a first Schottky barrier diode; and a sealing body which sealsthe first, second, third and fourth semiconductor chips, the first,second and third chip mounting sections and some of the plurality ofexternal terminals, wherein the plurality of external terminals includea first power supply terminal which supplies an input power supplypotential, second power supply terminals which supply a potential lowerthan the input power supply potential, a signal terminal which controlsthe control circuit of the third semiconductor chip, and an outputterminal which outputs an output power supply potential to the outside,wherein the first field effect transistor has a source-drain pathseries-connected between the first power supply terminal and the outputterminal; wherein the second field effect transistor has a source-drainpath series-connected between the output terminal and the second powersupply terminal, wherein the control circuit of the third semiconductorchip controls respective operations of the first and second field effecttransistors in accordance with a control signal inputted to the signalterminal, wherein the third semiconductor chip is disposed in such amanner that a distance between the third semiconductor chip and thefirst semiconductor chip is set shorter than a distance between thethird semiconductor chip and the second semiconductor chip, and whereinthe first Schottky barrier diode of the fourth semiconductor chip has acathode electrically connected to the output terminal and an anodeelectrically connected to the second power supply terminal, and iselectrically connected so as to be parallel with the second field effecttransistor.
 2. A semiconductor device according to claim 1, wherein anelectrode for an anode in a main surface of the fourth semiconductorchip is electrically connected to an electrode for a source of thesecond semiconductor chip through a wire, wherein an electrode for asource in a main surface of the second semiconductor chip iselectrically connected to the second power supply terminal through awire, and wherein the area of a region connected with the wire at theanode electrode in the main surface of the fourth semiconductor chip issmaller than the area of a region covered with an insulating film aroundthe region connected with the wire, of the main surface of the fourthsemiconductor chip.
 3. A semiconductor device according to claim 1,wherein the second power supply terminal to which the source of thesecond field effect transistor is electrically connected, and the secondpower supply terminal to which the anode of the first Schottky barrierdiode is electrically connected, are separated from each other.
 4. Asemiconductor device according to claim 3, wherein the anode electrodein the main surface of the fourth semiconductor chip and the sourceelectrode in the main surface of the second semiconductor chip arerespectively electrically connected to the second power supply terminalsseparated from each other, through wires, and wherein the area of aregion connected with the wire at the anode electrode in the mainsurface of the fourth semiconductor chip is smaller than the area of aregion covered with an insulating film around the region connected withthe wire, of the main surface of the fourth semiconductor chip.
 5. Asemiconductor device according to claim 1, wherein the control circuitof the third semiconductor chip includes a first control circuit whichcontrols the operation of the first field effect transistor, and asecond control circuit which controls the operation of the second fieldeffect transistor.
 6. A semiconductor device according to claim 5,wherein a cathode of a second Schottky barrier diode is electricallyconnected to an output of the first control circuit, an anode of thesecond Schottky barrier diode is electrically connected to the secondpower supply terminal, and the second Schottky barrier diode iselectrically connected between the output of the first control circuitand the second power supply terminal.
 7. A semiconductor deviceaccording to claim 6, wherein the sealing body further includes: (a) afifth semiconductor chip having the second Schottky barrier diode; (b) afourth chip mounting section with the fifth semiconductor chip mountedthereover, and electrically connected to the cathode of the secondSchottky barrier diode; (c) a wire which electrically connects thefourth chip mounting section to the output of the first control circuit;and (d) a wire which electrically connects the anode of the secondSchottky barrier diode to the second power supply terminal.
 8. Asemiconductor device according to claim 6, wherein the sealing bodyfurther includes: (a) a fifth semiconductor chip having the secondSchottky barrier diode; and (b) a wire which electrically connects thecathode of the second Schottky barrier diode to the output of the firstcontrol circuit, and wherein the fifth semiconductor chip is mountedover the third chip mounting section in a state in which the anode ofthe second Schottky barrier diode is electrically connected to thesecond power supply terminal through the third chip mounting section. 9.A semiconductor device according to claim 6, wherein the sealing bodyfurther includes: (a) a fifth semiconductor chip having the secondSchottky barrier diode; and (b) a wire which electrically connects theanode of the second Schottky barrier diode to the second power supplyterminal, and wherein the fifth semiconductor chip is mounted over thefirst semiconductor chip in a state in which the cathode of the secondSchottky barrier diode is electrically connected to a gate electrode ofthe first field effect transistor of the first semiconductor chip.
 10. Asemiconductor device comprising: a first chip mounting section, a secondchip mounting section and a third chip mounting section respectivelydisposed at intervals; a plurality of external terminals disposed aroundthe first, second and third chip mounting sections; a firstsemiconductor chip disposed over the first chip mounting section andhaving a first field effect transistor; a second semiconductor chipdisposed over the second chip mounting section and having a second fieldeffect transistor; a third semiconductor chip disposed over the thirdchip mounting section and including a control circuit which controlsoperations of the first and second field effect transistors; a fourthsemiconductor chip disposed over the second chip mounting section andhaving a first Schottky barrier diode; and a sealing body which sealsthe first, second, third and fourth semiconductor chips, the first,second and third chip mounting sections and some of the plurality ofexternal terminals, wherein the plurality of external terminals includea first power supply terminal which supplies an input power supplypotential, second power supply terminals which supply a potential lowerthan the input power supply potential, a signal terminal which controlsthe control circuit of the third semiconductor chip, and an outputterminal which outputs an output power supply potential to the outside,wherein the first field effect transistor has a source-drain pathseries-connected between the first power supply terminal and the outputterminal; wherein the second field effect transistor has a source-drainpath series-connected between the output terminal and the second powersupply terminal, wherein the control circuit of the third semiconductorchip controls respective gates of the first and second field effecttransistors in accordance with a control signal inputted to the signalterminal, wherein the second semiconductor chip is placed in a positioncloser to the second power supply terminal than the output terminal, andwherein the first Schottky barrier diode of the fourth semiconductorchip has a cathode electrically connected to the output terminal and ananode electrically connected to the second power supply terminal, and iselectrically connected so as to be parallel with the second field effecttransistor.
 11. A semiconductor device according to claim 10, wherein anelectrode for an anode in a main surface of the fourth semiconductorchip is electrically connected to an electrode for a source of thesecond semiconductor chip through a wire, wherein an electrode for asource in a main surface of the second semiconductor chip iselectrically connected to the second power supply terminal through awire, and wherein the area of a region connected with the wire at theanode electrode in the main surface of the fourth semiconductor chip issmaller than the area of a region covered with an insulating film aroundthe region connected with the wire, of the main surface of the fourthsemiconductor chip.
 12. A semiconductor device according to claim 12,wherein the second power supply terminal to which the source of thesecond field effect transistor is electrically connected, and the secondpower supply terminal to which the anode of the first Schottky barrierdiode is electrically connected, are separately formed and separatedfrom each other.
 13. A semiconductor device according to claim 12,wherein the anode electrode in the main surface of the fourthsemiconductor chip and the source electrode in the main surface of thesecond semiconductor chip are respectively electrically connected to thesecond power supply terminals separately formed and separated from eachother, through wires, and wherein the area of a region connected withthe wire at the anode electrode in the main surface of the fourthsemiconductor chip is smaller than the area of a region covered with aninsulating film around the region connected with the wire, of the mainsurface of the fourth semiconductor chip.
 14. A semiconductor deviceaccording to claim 10, wherein the control circuit of the thirdsemiconductor chip includes a first control circuit for control of theoperation of the first field effect transistor, and a second controlcircuit for control of the operation of the second field effecttransistor.
 15. A semiconductor device according to claim 14, wherein acathode of a second Schottky barrier diode is electrically connected toan output of the first control circuit, an anode of the second Schottkybarrier diode is electrically connected to the second power supplyterminal, and the second Schottky barrier diode is electricallyconnected between the output of the first control circuit and the secondpower supply terminal.
 16. A semiconductor device according to claim 15,wherein the sealing body further includes: (a) a fifth semiconductorchip having the second Schottky barrier diode; (b) a fourth chipmounting section with the fifth semiconductor chip mounted thereover,and electrically connected to the cathode of the second Schottky barrierdiode; (c) a wire which electrically connects the fourth chip mountingsection to the output of the first control circuit; and (d) a wire whichelectrically connects the anode of the second Schottky barrier diode tothe second power supply terminal.
 17. A semiconductor device accordingto claim 15, wherein the sealing body further includes: (a) a fifthsemiconductor chip having the second Schottky barrier diode; and (b) awire which electrically connects the cathode of the second Schottkybarrier diode to the output of the first control circuit, and whereinthe fifth semiconductor chip is mounted over the third chip mountingsection in a state in which the anode of the second Schottky barrierdiode is electrically connected to the second power supply terminalthrough the third chip mounting section.
 18. A semiconductor deviceaccording to claim 15, wherein the sealing body further includes: (a) afifth semiconductor chip having the second Schottky barrier diode; and(b) a wire which electrically connects the anode of the second Schottkybarrier diode to the second power supply terminal, and wherein the fifthsemiconductor chip is mounted over the first semiconductor chip in astate in which the cathode of the second Schottky barrier diode iselectrically connected to a gate electrode of the first field effecttransistor of the first semiconductor chip.
 19. A semiconductor devicecomprising: a first chip mounting section, a second chip mountingsection and a third chip mounting section respectively disposed atintervals; a plurality of external terminals disposed around the first,second and third chip mounting sections; a first semiconductor chipdisposed over the first chip mounting section and having a first fieldeffect transistor; a second semiconductor chip disposed over the secondchip mounting section and having a second field effect transistor; athird semiconductor chip disposed over the third chip mounting sectionand including a control circuit which controls operations of the firstand second field effect transistors; a fourth semiconductor chipdisposed over the second chip mounting section and having a firstSchottky barrier diode; and a sealing body which seals the first,second, third and fourth semiconductor chips, the first, second andthird chip mounting sections and some of the plurality of externalterminals, wherein the plurality of external terminals include a firstpower supply terminal which supplies an input power supply potential,second power supply terminals which supply a potential lower than theinput power supply potential, a signal terminal which controls thecontrol circuit of the third semiconductor chip, and an output terminalwhich outputs an output power supply potential to the outside, whereinthe first field effect transistor has a source-drain pathseries-connected between the first power supply terminal and the outputterminal; wherein the second field effect transistor has a source-drainpath series-connected between the output terminal and the second powersupply terminal, wherein the control circuit of the third semiconductorchip controls respective gates of the first and second field effecttransistors in accordance with a control signal inputted to the signalterminal, wherein the first semiconductor chip is disposed in such amanner that one side thereof approaches one side of the first chipmounting section, which is adjacent to one side of the second chipmounting section, and wherein the first Schottky barrier diode of thefourth semiconductor chip has a cathode electrically connected to theoutput terminal and an anode electrically connected to the second powersupply terminal, and is electrically connected so as to be parallel withthe second field effect transistor.
 20. A semiconductor device accordingto claim 19, wherein an electrode for an anode in a main surface of thefourth semiconductor chip is electrically connected to an electrode fora source of the second semiconductor chip through a wire, wherein anelectrode for a source in a main surface of the second semiconductorchip is electrically connected to the second power supply terminalthrough a wire, and wherein the area of a region connected with the wireat the anode electrode in the main surface of the fourth semiconductorchip is smaller than the area of a region covered with an insulatingfilm around the region connected with the wire, of the main surface ofthe fourth semiconductor chip.
 21. A semiconductor device according toclaim 19, wherein the second power supply terminal to which the sourceof the second field effect transistor is electrically connected, and thesecond power supply terminal to which the anode of the first Schottkybarrier diode is electrically connected, are separately formed andseparated from each other.
 22. A semiconductor device according to claim21, wherein the anode electrode in the main surface of the fourthsemiconductor chip and the source electrode in the main surface of thesecond semiconductor chip are respectively electrically connected to thesecond power supply terminals separately formed and separated from eachother, through wires, and wherein the area of a region connected withthe wire at the anode electrode in the main surface of the fourthsemiconductor chip is smaller than the area of a region covered with aninsulating film around the region connected with the wire, of the mainsurface of the fourth semiconductor chip.
 23. A semiconductor deviceaccording to claim 19, wherein the control circuit of the thirdsemiconductor chip includes a first control circuit for control of theoperation of the first field effect transistor, and a second controlcircuit for control of the operation of the second field effecttransistor.
 24. A semiconductor device according to claim 23, wherein acathode of a second Schottky barrier diode is electrically connected toan output of the first control circuit, an anode of the second Schottkybarrier diode is electrically connected to the second power supplyterminal, and the second Schottky barrier diode is electricallyconnected between the output of the first control circuit and the secondpower supply terminal.
 25. A semiconductor device according to claim 24,wherein the sealing body further includes: (a) a fifth semiconductorchip having the second Schottky barrier diode; (b) a fourth chipmounting section with the fifth semiconductor chip mounted thereover,and electrically connected to the cathode of the second Schottky barrierdiode; (c) a wire which electrically connects the fourth chip mountingsection to the output of the first control circuit; and (d) a wire whichelectrically connects the anode of the second Schottky barrier diode tothe second power supply terminal.
 26. A semiconductor device accordingto claim 24, wherein the sealing body further includes: (a) a fifthsemiconductor chip having the second Schottky barrier diode; and (b) awire which electrically connects the cathode of the second Schottkybarrier diode to the output of the first control circuit, and whereinthe fifth semiconductor chip is mounted over the third chip mountingsection in a state in which the anode of the second Schottky barrierdiode is electrically connected to the second power supply terminalthrough the third chip mounting section.
 27. A semiconductor deviceaccording to claim 24, wherein the sealing body further includes: (a) afifth semiconductor chip having the second Schottky barrier diode; and(b) a wire which electrically connects the anode of the second Schottkybarrier diode to the second power supply terminal, and wherein the fifthsemiconductor chip is mounted over the first semiconductor chip in astate in which the cathode of the second Schottky barrier diode iselectrically connected to a gate electrode of the first field effecttransistor of the first semiconductor chip.
 28. A semiconductor devicecomprising: a first power supply terminal for supply of a firstpotential; at least one second power supply terminal for supply of asecond potential lower than the first potential; first and second fieldeffect transistors series-connected between the first and second powersupply terminals; first and second control circuits which arerespectively electrically connected to inputs of the first and secondfield effect transistors and control operations of the first and secondfield effect transistors; and an output wiring section connected to awiring that connects the first and second field effect transistors,wherein a cathode of a Schottky barrier diode is electrically connectedto a wiring that connects an output of the first control circuit and theinput of the first field effect transistor, an anode of the Schottkybarrier diode is electrically connected to the second power terminal,and the Schottky barrier diode is electrically connected between awiring that connects the output of the first control circuit and theinput of the first field effect transistor, and the second power supplyterminal.